2EDL8033G4BXTMA1 vs IR2104STRPBF 비교

다음의 상세 나란히 비교: 2EDL8033G4BXTMA1 제조: Infineon 및 IR2104STRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
2EDL8033G4BXTMA1 2EDL8033G4BXTMA1 - 120V Half-Bridge Gate Driver | Infineon

2EDL8033G4BXTMA1 - 120V Half-Bridge Gate Driver | Infineon

2EDL8033G4BXTMA1 ✓ 활성

사양 비교

파라미터 2EDL8033G4BXTMA1 IR2104STRPBF
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.49 $0.59
토폴로지 Half-bridge (high-side + low-side) —
Maximum Bootstrap Voltage (VBS) 120 V —
Source Drive Current 3 A —
Sink Drive Current 4 A —
Number of Channels 2 (HS + LS) —
Isolation Type Junction-isolated (non-galvanic) —
Input Logic Compatibility TTL 3.3 V, 5 V, 15 V logic
Input Common-Mode Range -10 V to 20 V —
Input Type Independent HS and LS —
Integrated Dead-Time Control Yes (programmable) —
Under-Voltage Lockout (VCC/VDD) Yes —
Under-Voltage Lockout (VBS/High-Side) Yes —
Shoot-Through Protection Yes —
패키지 PG-VDSON-8-5 8-SOIC (SOIC-8)
실장 유형 Surface Mount Surface Mount
RoHS 상태 Compliant Compliant
Marking Code 2ED8033G4B —
Product Type — Half-Bridge Gate Driver IC
Configuration — High-side and low-side referenced output channels
출력 수 — 2 (high-side + low-side)
Offset Voltage (High-Side, Max) — 600 V
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Output Source Current (typ) — 0.21 A
Output Sink Current (typ) — 0.36 A
Rise Time (typ) — 100 ns
Fall Time (typ) — 50 ns
Propagation Delay (typ) — 680 ns
Turn-On Propagation Delay (typ) — 150 ns
Turn-Off Propagation Delay (typ) — 130 ns
Quiescent Current (VCC/VBS, typ) — 150 uA
Shutdown Pin — Yes (active-low shutdown input)
Undervoltage Lockout — Yes (VCC and VBS)
Cross-Conduction Prevention — Yes (matched propagation delay)
dV/dt Immunity — Yes
Negative VS Transient Tolerance — Yes
동작 온도 범위 — -40 C to +150 C

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