2SJ74-GR vs 2SJ74-BL 对比

详细并排对比 2SJ74-GR 出自 Toshiba 和 2SJ74-BL 出自 Toshiba。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 2SJ74-GR 2SJ74-BL
品牌 Toshiba Toshiba
分类 Transistors Transistors
生命周期状态 停产 有效
库存状态 有库存 有库存
单价(USD) $0.00 $2.94
Polarity P-Channel —
晶体管类型 JFET (Junction Field-Effect Transistor) P-Channel JFET (depletion mode)
Technology Silicon P Channel Junction Type —
Maximum Power Dissipation (PD) 400 mW —
封装 2-5F1D (SC-43), 3 PIN TO-92 (Toshiba 2-5F1A, SC-43), 3-pin
Number of Units in IC 1 1
Grade Suffix GR (Idss grade classification) —
Recommended Application First stages of EQ amplifiers and M.C. head amplifiers —
安装类型 Through Hole Through-Hole
Configuration Single FET —
Gate-Drain Breakdown Voltage (VGDS) [DATA_NEEDED: gate-drain breakdown voltage] —
Drain-Source Voltage (VDSS) [DATA_NEEDED: drain-source voltage] —
Zero-Gate Drain Current (IDSS) [DATA_NEEDED: IDSS range for GR grade] —
Gate-Source Cutoff Voltage (VGS(off)) [DATA_NEEDED: gate-source cutoff voltage] —
Input Capacitance (Ciss) [DATA_NEEDED: input capacitance] [DATA_NEEDED: Ciss]
工作温度范围 [DATA_NEEDED: operating temperature range] —
Drain-Source Breakdown Voltage (VGDS) — -25 V
Drain-Source Current (IDSS), BL grade — 6 mA to 12 mA
Total Power Dissipation (PD) — 400 mW
Gate-Source Voltage (max) — [DATA_NEEDED: Gate-Source Voltage VGSO]
Reverse Transfer Capacitance (Crss) — [DATA_NEEDED: Crss]
Input Resistance (Rgss) — [DATA_NEEDED: Rgss]
Transfer Admittance (Yfs) — [DATA_NEEDED: Yfs]
Noise Figure (NF) — [DATA_NEEDED: Noise Figure NF]
Channel Type — P
Applications — Low noise audio amplifier, first stages of EQ amplifiers and MC head amplifiers
工作温度 — [DATA_NEEDED: Operating Temperature Range]

数据手册与资源

浏览全部产品 创建 BOM 获取报价