2SJ74-GR vs 2SJ74-BL 비교
다음의 상세 나란히 비교: 2SJ74-GR 제조: Toshiba 및 2SJ74-BL 제조: Toshiba. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | 2SJ74-GR | 2SJ74-BL |
|---|---|---|
| 브랜드 | Toshiba | Toshiba |
| 카테고리 | Transistors | Transistors |
| 수명 주기 상태 | 수명 종료 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.00 | $2.94 |
| Polarity | P-Channel | — |
| 트랜지스터 유형 | JFET (Junction Field-Effect Transistor) | P-Channel JFET (depletion mode) |
| Technology | Silicon P Channel Junction Type | — |
| Maximum Power Dissipation (PD) | 400 mW | — |
| 패키지 | 2-5F1D (SC-43), 3 PIN | TO-92 (Toshiba 2-5F1A, SC-43), 3-pin |
| Number of Units in IC | 1 | 1 |
| Grade Suffix | GR (Idss grade classification) | — |
| Recommended Application | First stages of EQ amplifiers and M.C. head amplifiers | — |
| 실장 유형 | Through Hole | Through-Hole |
| Configuration | Single FET | — |
| Gate-Drain Breakdown Voltage (VGDS) | [DATA_NEEDED: gate-drain breakdown voltage] | — |
| Drain-Source Voltage (VDSS) | [DATA_NEEDED: drain-source voltage] | — |
| Zero-Gate Drain Current (IDSS) | [DATA_NEEDED: IDSS range for GR grade] | — |
| Gate-Source Cutoff Voltage (VGS(off)) | [DATA_NEEDED: gate-source cutoff voltage] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: input capacitance] | [DATA_NEEDED: Ciss] |
| 동작 온도 범위 | [DATA_NEEDED: operating temperature range] | — |
| Drain-Source Breakdown Voltage (VGDS) | — | -25 V |
| Drain-Source Current (IDSS), BL grade | — | 6 mA to 12 mA |
| Total Power Dissipation (PD) | — | 400 mW |
| Gate-Source Voltage (max) | — | [DATA_NEEDED: Gate-Source Voltage VGSO] |
| Reverse Transfer Capacitance (Crss) | — | [DATA_NEEDED: Crss] |
| Input Resistance (Rgss) | — | [DATA_NEEDED: Rgss] |
| Transfer Admittance (Yfs) | — | [DATA_NEEDED: Yfs] |
| Noise Figure (NF) | — | [DATA_NEEDED: Noise Figure NF] |
| Channel Type | — | P |
| Applications | — | Low noise audio amplifier, first stages of EQ amplifiers and MC head amplifiers |
| 동작 온도 | — | [DATA_NEEDED: Operating Temperature Range] |