2SJ74-GR vs 2SJ74-BL 比較

詳細な並列比較: 2SJ74-GR メーカー: Toshiba および 2SJ74-BL メーカー: Toshiba。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。

Toshiba
2SJ74-GR 2SJ74-GR - P-Channel JFET Low-Noise Audio | Toshiba

2SJ74-GR - P-Channel JFET Low-Noise Audio | Toshiba

2SJ74-GR ✗ 生産終了

仕様比較

パラメータ 2SJ74-GR 2SJ74-BL
ブランド Toshiba Toshiba
カテゴリ Transistors Transistors
ライフサイクル状態 製造終了 有効
在庫状況 In Stock In Stock
単価(USD) $0.00 $2.94
Polarity P-Channel —
トランジスタタイプ JFET (Junction Field-Effect Transistor) P-Channel JFET (depletion mode)
Technology Silicon P Channel Junction Type —
Maximum Power Dissipation (PD) 400 mW —
パッケージ 2-5F1D (SC-43), 3 PIN TO-92 (Toshiba 2-5F1A, SC-43), 3-pin
Number of Units in IC 1 1
Grade Suffix GR (Idss grade classification) —
Recommended Application First stages of EQ amplifiers and M.C. head amplifiers —
実装タイプ Through Hole Through-Hole
Configuration Single FET —
Gate-Drain Breakdown Voltage (VGDS) [DATA_NEEDED: gate-drain breakdown voltage] —
Drain-Source Voltage (VDSS) [DATA_NEEDED: drain-source voltage] —
Zero-Gate Drain Current (IDSS) [DATA_NEEDED: IDSS range for GR grade] —
Gate-Source Cutoff Voltage (VGS(off)) [DATA_NEEDED: gate-source cutoff voltage] —
Input Capacitance (Ciss) [DATA_NEEDED: input capacitance] [DATA_NEEDED: Ciss]
動作温度範囲 [DATA_NEEDED: operating temperature range] —
Drain-Source Breakdown Voltage (VGDS) — -25 V
Drain-Source Current (IDSS), BL grade — 6 mA to 12 mA
Total Power Dissipation (PD) — 400 mW
Gate-Source Voltage (max) — [DATA_NEEDED: Gate-Source Voltage VGSO]
Reverse Transfer Capacitance (Crss) — [DATA_NEEDED: Crss]
Input Resistance (Rgss) — [DATA_NEEDED: Rgss]
Transfer Admittance (Yfs) — [DATA_NEEDED: Yfs]
Noise Figure (NF) — [DATA_NEEDED: Noise Figure NF]
Channel Type — P
Applications — Low noise audio amplifier, first stages of EQ amplifiers and MC head amplifiers
動作温度 — [DATA_NEEDED: Operating Temperature Range]

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