6EDL04I065NRXUMA1 vs IDL04G65C5XUMA2 对比

详细并排对比 6EDL04I065NRXUMA1 出自 Infineon 和 IDL04G65C5XUMA2 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
6EDL04I065NRXUMA1 6EDL04I065NRXUMA1 - 650V 3-Phase Gate Driver IC | Infineon

6EDL04I065NRXUMA1 - 650V 3-Phase Gate Driver IC | Infineon

6EDL04I065NRXUMA1 ✓ 量产中
Infineon
IDL04G65C5XUMA2 IDL04G65C5XUMA2 - 650V 4A SiC Schottky Diode | Infineon

IDL04G65C5XUMA2 - 650V 4A SiC Schottky Diode | Infineon

IDL04G65C5XUMA2 ✓ 量产中

规格对比

参数 6EDL04I065NRXUMA1 IDL04G65C5XUMA2
品牌 Infineon Infineon
分类 Power MOSFET Drivers Diodes
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $3.92 $0.92
拓扑 3-phase gate driver (6 channels) —
输出配置 Non-inverting half-bridge drivers —
Maximum Blocking Voltage 650 V —
Number of Channels 6 —
Driver Type IGBT / MOSFET gate driver —
Technology Infineon thin-film SOI —
Integrated Bootstrap Diode (BSD) Yes —
Over Current Protection (OCP) Yes —
Enable Input (EN) Yes —
Fault Output Yes —
封装 PG-TSSOP-25 PG-VSON-4 (DPAK real2pin) Surface Mount
安装类型 Surface Mount Surface Mount, Tape & Reel
Family 6EDL04x065xR —
RoHS 状态 Compliant —
Datasheet Document Infineon 6EDL04 family datasheet (see datasheet_url) —
Manufacturer — Infineon Technologies
Product Family — CoolSiC™ Schottky Diode Generation 5
Diode Type — Silicon Carbide (SiC) Schottky
Repetitive Peak Reverse Voltage (V_RRM) — 650 V
Continuous Forward Current (I_F(AV)) — 4 A
Total Capacitive Charge (Q_C) — 7 nC (typical)
Forward Voltage (V_F) — 1.7 V at 4 A (typical, per datasheet)
Reverse Leakage Current (I_R) — 70 µA at 650 V
Junction Capacitance (C_J) — 130 pF at 1 V, 1 MHz
Reverse Recovery Time (t_rr) — 0 ns (Schottky, no minority-carrier storage)
工作结温 — -55°C to +175°C
引脚数量 — 4 (with exposed thermal pad)
RoHS / REACH — RoHS Compliant (per Infineon product page)

数据手册与资源

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