6EDL04I065NRXUMA1 vs IDL04G65C5XUMA2 비교

다음의 상세 나란히 비교: 6EDL04I065NRXUMA1 제조: Infineon 및 IDL04G65C5XUMA2 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
6EDL04I065NRXUMA1 6EDL04I065NRXUMA1 - 650V 3-Phase Gate Driver IC | Infineon

6EDL04I065NRXUMA1 - 650V 3-Phase Gate Driver IC | Infineon

6EDL04I065NRXUMA1 ✓ 활성
Infineon
IDL04G65C5XUMA2 IDL04G65C5XUMA2 - 650V 4A SiC Schottky Diode | Infineon

IDL04G65C5XUMA2 - 650V 4A SiC Schottky Diode | Infineon

IDL04G65C5XUMA2 ✓ 활성

사양 비교

파라미터 6EDL04I065NRXUMA1 IDL04G65C5XUMA2
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Diodes
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $3.92 $0.92
토폴로지 3-phase gate driver (6 channels) —
출력 구성 Non-inverting half-bridge drivers —
Maximum Blocking Voltage 650 V —
Number of Channels 6 —
Driver Type IGBT / MOSFET gate driver —
Technology Infineon thin-film SOI —
Integrated Bootstrap Diode (BSD) Yes —
Over Current Protection (OCP) Yes —
Enable Input (EN) Yes —
Fault Output Yes —
패키지 PG-TSSOP-25 PG-VSON-4 (DPAK real2pin) Surface Mount
실장 유형 Surface Mount Surface Mount, Tape & Reel
Family 6EDL04x065xR —
RoHS 상태 Compliant —
Datasheet Document Infineon 6EDL04 family datasheet (see datasheet_url) —
Manufacturer — Infineon Technologies
Product Family — CoolSiC™ Schottky Diode Generation 5
Diode Type — Silicon Carbide (SiC) Schottky
Repetitive Peak Reverse Voltage (V_RRM) — 650 V
Continuous Forward Current (I_F(AV)) — 4 A
Total Capacitive Charge (Q_C) — 7 nC (typical)
Forward Voltage (V_F) — 1.7 V at 4 A (typical, per datasheet)
Reverse Leakage Current (I_R) — 70 µA at 650 V
Junction Capacitance (C_J) — 130 pF at 1 V, 1 MHz
Reverse Recovery Time (t_rr) — 0 ns (Schottky, no minority-carrier storage)
동작 접합 온도 — -55°C to +175°C
핀 수 — 4 (with exposed thermal pad)
RoHS / REACH — RoHS Compliant (per Infineon product page)

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