AS4C512M16D4B-62BCNTR vs AS4C512M16D4-75BCNTR 对比
详细并排对比 AS4C512M16D4B-62BCNTR 出自 Alliance Memory 和 AS4C512M16D4-75BCNTR 出自 Alliance Memory。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Alliance Memory
AS4C512M16D4B-62BCNTR - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4B-62BCNTR ✓ 量产中Alliance Memory
AS4C512M16D4-75BCNTR - 8Gb DDR4 SDRAM 2666Mbps | Alliance Memory
AS4C512M16D4-75BCNTR ✓ 量产中规格对比
| 参数 | AS4C512M16D4B-62BCNTR | AS4C512M16D4-75BCNTR |
|---|---|---|
| 品牌 | Alliance Memory | Alliance Memory |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $8.10 | $7.90 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储容量 | 8 Gbit (512M x 16) | — |
| 数据速率 | 3200 MT/s | 2666 Mbps per pin |
| Clock Frequency | 1600 MHz | 1.333 GHz |
| CAS 延迟 | 19 ns | — |
| 电源电压 | 1.2 V (1.14V to 1.26V) | — |
| 接口 | Parallel | Parallel |
| 封装 | 96-FBGA (7.5x13 mm) | 96-ball FBGA (7.5 x 13 mm) |
| 工作温度 | 0°C to 95°C | — |
| 安装类型 | Surface Mount | Surface Mount |
| JEDEC Standard | Compliant | — |
| 存储组织 | 512M x 16 | 512M x 16 |
| Revision | Rev.B | — |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Density | — | 8 Gbit |
| Access Time | — | 18 ns |
| Write Cycle Time | — | 15 ns |
| Supply Voltage (VDD) | — | 1.2 V (range 1.14 V to 1.26 V) |
| Prefetch Architecture | — | 8n |
| Internal Bank Count | — | 16 banks |
| 工作温度范围 | — | 0C to +95C (case, commercial) |
| Process Technology | — | 20nm-class DRAM |
| Termination | — | On-die termination (ODT) |
| Refresh Modes | — | Auto-refresh and self-refresh |
| Packaging Option | — | Tape & Reel (TR suffix) |