BC817-40-RF vs BC817-40 对比

详细并排对比 BC817-40-RF 出自 Taiwan Semiconductor 和 BC817-40 出自 Nexperia。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Taiwan Semiconductor
BC817-40-RF BC817-40-RF - 45V 0.5A NPN BJT SOT-23 | Taiwan Semiconductor

BC817-40-RF - 45V 0.5A NPN BJT SOT-23 | Taiwan Semiconductor

BC817-40-RF ✓ 量产中

规格对比

参数 BC817-40-RF BC817-40
品牌 Taiwan Semiconductor Nexperia
分类 Transistors Transistors
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.03 $0.02
晶体管类型 NPN Bipolar Junction Transistor (BJT) NPN Bipolar Junction Transistor (BJT)
封装 SOT-23 (TO-236), 3 pins SOT-23 (TO-236AB), 3 pins
集电极-发射极电压(Vceo) 45 V 45 V
集电极-基极电压(Vcbo) 50 V 50 V
发射极-基极电压(Vebo) 5 V 5 V
Continuous Collector Current (IC) 0.5 A 500 mA
Peak Collector Current (ICM) [DATA_NEEDED: peak pulsed collector current rating] [DATA_NEEDED: ICM value]
DC Current Gain (hFE) Bin 250 to 600 (BC817-40 gain bin) —
过渡频率(ft) 100 MHz 100 MHz
Power Dissipation (Pd) 310 mW —
工作结温 -55 C to +150 C -65 C to +150 C
安装类型 Surface Mount Surface Mount
MSL 等级 1 (unlimited) 1
RoHS 状态 Compliant (per manufacturer product page) Compliant
Lead-Free Yes (per Taiwan Semiconductor product page) —
PNP Complement BC807 series —
Total Power Dissipation (Ptot) — 310 mW
DC Current Gain (hFE) - -40 bin — 250 to 600 (at 100 mA, 1 V)
Collector-Emitter Saturation Voltage (VCEsat) — 700 mV max (at 500 mA, 50 mA base)
Base-Emitter Voltage (VBE) — [DATA_NEEDED: VBE typical]
Complementary PNP Part — BC807-40

数据手册与资源

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