BC817-40-SNR vs BC817-40 对比

详细并排对比 BC817-40-SNR 出自 Nexperia 和 BC817-40 出自 Nexperia。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Nexperia
BC817-40-SNR BC817-40-SNR - 45V 500mA NPN Transistor SOT-23 | Nexperia

BC817-40-SNR - 45V 500mA NPN Transistor SOT-23 | Nexperia

BC817-40-SNR ✓ 量产中

规格对比

参数 BC817-40-SNR BC817-40
品牌 Nexperia Nexperia
分类 Transistors Transistors
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.04 $0.02
晶体管类型 NPN NPN Bipolar Junction Transistor (BJT)
封装 SOT-23 (TO-236AB) SOT-23 (TO-236AB), 3 pins
安装类型 Surface Mount Surface Mount
集电极-发射极电压(Vceo) 45 V 45 V
集电极-基极电压(Vcbo) 50 V 50 V
发射极-基极电压(Vebo) 5 V 5 V
Continuous Collector Current (IC) 500 mA 500 mA
Peak Collector Current (ICM) 1000 mA [DATA_NEEDED: ICM value]
功耗(Ptot) 250 mW —
过渡频率(ft) 100 MHz 100 MHz
DC Current Gain (hFE) 250 to 630 (at VCE=2V, IC=100mA) —
hFE Bin -40 (high gain bin) —
工作温度 -65 C to +150 C —
Pin Configuration 1-Base, 2-Emitter, 3-Collector (SOT-23 standard) —
RoHS 状态 Compliant Compliant
MSL 等级 MSL 1 1
Complement (PNP) BC807-40 —
Packaging Suffix /SNR (SOT-23, Tape and Reel, 3000 pcs) —
Total Power Dissipation (Ptot) — 310 mW
DC Current Gain (hFE) - -40 bin — 250 to 600 (at 100 mA, 1 V)
Collector-Emitter Saturation Voltage (VCEsat) — 700 mV max (at 500 mA, 50 mA base)
Base-Emitter Voltage (VBE) — [DATA_NEEDED: VBE typical]
工作结温 — -65 C to +150 C
Complementary PNP Part — BC807-40

数据手册与资源

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