BSC011N03LSATMA1 vs BSC0911NDATMA1 对比
详细并排对比 BSC011N03LSATMA1 出自 Infineon 和 BSC0911NDATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC011N03LSATMA1 | BSC0911NDATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.54 | $0.46 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 30V | — |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | 25 V |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Continuous Drain Current (ID) at TA=25C | 37 A | — |
| Pulsed Drain Current (IDM) | 100 A (TC) | 30 A |
| On-State Resistance (RDS(on)) at VGS=10V | 1.1 mOhm (typ) | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.2 V (typ 1.6 V) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at TC=25C | 96 W | — |
| Power Dissipation (PD) at TA=25C | 2.5 W | — |
| 工作温度范围 | -55C to +150C | — |
| 封装 | PG-TDSON-8-1 (SuperSO8) | PG-TISON-8 (8-PowerTDFN) |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | 1 | [DATA_NEEDED: MSL rating] |
| RoHS 状态 | Compliant | Compliant |
| Product Family | — | OptiMOS 25V |
| Configuration | — | Dual N-Channel (2 N-CH) |
| Continuous Drain Current (ID) | — | 18 A |
| Power Dissipation (PD) | — | 1 W |
| 工作温度 | — | -55C to +150C (junction) |
| Channel Type | — | N-Channel Enhancement Mode |
| Technology | — | OptiMOS trench MOSFET |
| Gate Threshold (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| RDS(on) max @ VGS=10V | — | [DATA_NEEDED: RDS(on) at 10V VGS] |