BSC011N03LSTATMA1 vs IPC50N04S5L5R5ATMA1 对比

详细并排对比 BSC011N03LSTATMA1 出自 Infineon 和 IPC50N04S5L5R5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPC50N04S5L5R5ATMA1 IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΩ OptiMOS Auto MOSFET | Infineon

IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΩ OptiMOS Auto MOSFET | Infineon

IPC50N04S5L5R5ATMA1 ✓ 量产中

规格对比

参数 BSC011N03LSTATMA1 IPC50N04S5L5R5ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 不推荐新设计 有效
库存状态 有库存 有库存
单价(USD) $1.55 $0.36
Manufacturer Infineon Technologies —
Series OptiMOS —
FET Type N-Channel —
Drain-Source Voltage (VDS) 30 V 40 V
Continuous Drain Current (ID) at TA=25C 39 A —
Continuous Drain Current (ID) at TC=25C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Static Drain-Source On-Resistance RDS(on) max at VGS=10V 1.1 mOhm (typical 0.9 mOhm) —
Gate-Source Threshold Voltage VGS(th) typ 2 V —
Gate-Source Voltage (VGS) max +/-20 V —
Total Gate Charge (Qg) typ 72 nC —
Power Dissipation at TA=25C 3 W —
Power Dissipation at TC=25C 115 W —
工作结温 -55C to +150C —
封装 PG-TDSON-8 FL (8-pin, exposed drain pad) PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad)
安装类型 Surface Mount Surface Mount
Technology Trench MOSFET —
Configuration Single with built-in diode —
MSL 等级 [DATA_NEEDED: MSL rating] —
RoHS 状态 Compliant —
晶体管类型 — N-Channel MOSFET
Mode — Enhancement Mode
Continuous Drain Current (ID, Tc) — 50 A
Maximum Drain Current (silicon-limited, 25 °C) — 60 A
On-Resistance RDS(on) max @ VGS=10 V — 5.5 mΩ
Gate Threshold VGS(th) — Logic Level (enhancement at ≤ 4.5 V VGS)
Power Dissipation (Tc) — 42 W
Thermal Resistance Junction-to-Case RthJC — 3.6 K/W
工作温度范围 — -55 °C to +175 °C
AEC-Q101 Qualification — Qualified (automotive grade)
MSL (Moisture Sensitivity Level) — MSL1
Peak Reflow Temperature — 260 °C
Avalanche Rating — 100 % Avalanche Tested
RoHS / REACH — RoHS Compliant (Green Product)

数据手册与资源

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