BSC011N03LSTATMA1 vs IPC50N04S5L5R5ATMA1 비교

다음의 상세 나란히 비교: BSC011N03LSTATMA1 제조: Infineon 및 IPC50N04S5L5R5ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 BSC011N03LSTATMA1 IPC50N04S5L5R5ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 NRND 활성
재고 상태 In Stock In Stock
단가 (USD) $1.55 $0.36
Manufacturer Infineon Technologies —
Series OptiMOS —
FET Type N-Channel —
Drain-Source Voltage (VDS) 30 V 40 V
Continuous Drain Current (ID) at TA=25C 39 A —
Continuous Drain Current (ID) at TC=25C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Static Drain-Source On-Resistance RDS(on) max at VGS=10V 1.1 mOhm (typical 0.9 mOhm) —
Gate-Source Threshold Voltage VGS(th) typ 2 V —
Gate-Source Voltage (VGS) max +/-20 V —
Total Gate Charge (Qg) typ 72 nC —
Power Dissipation at TA=25C 3 W —
Power Dissipation at TC=25C 115 W —
동작 접합 온도 -55C to +150C —
패키지 PG-TDSON-8 FL (8-pin, exposed drain pad) PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad)
실장 유형 Surface Mount Surface Mount
Technology Trench MOSFET —
Configuration Single with built-in diode —
MSL 레벨 [DATA_NEEDED: MSL rating] —
RoHS 상태 Compliant —
트랜지스터 유형 — N-Channel MOSFET
Mode — Enhancement Mode
Continuous Drain Current (ID, Tc) — 50 A
Maximum Drain Current (silicon-limited, 25 °C) — 60 A
On-Resistance RDS(on) max @ VGS=10 V — 5.5 mΩ
Gate Threshold VGS(th) — Logic Level (enhancement at ≤ 4.5 V VGS)
Power Dissipation (Tc) — 42 W
Thermal Resistance Junction-to-Case RthJC — 3.6 K/W
동작 온도 범위 — -55 °C to +175 °C
AEC-Q101 Qualification — Qualified (automotive grade)
MSL (Moisture Sensitivity Level) — MSL1
Peak Reflow Temperature — 260 °C
Avalanche Rating — 100 % Avalanche Tested
RoHS / REACH — RoHS Compliant (Green Product)

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