BSC011N03LSTATMA1 vs IPC50N04S5L5R5ATMA1 Comparison
Detailed side-by-side comparison of BSC011N03LSTATMA1 by Infineon and IPC50N04S5L5R5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC011N03LSTATMA1
BSC011N03LSTATMA1 - 30V 100A OptiMOS N-Channel MOSFET | Infineon
BSC011N03LSTATMA1 NrndInfineon
IPC50N04S5L5R5ATMA1
IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΞ© OptiMOS Auto MOSFET | Infineon
IPC50N04S5L5R5ATMA1 β ActiveSpecification Comparison
| Parameter | BSC011N03LSTATMA1 | IPC50N04S5L5R5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Nrnd | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.55 | $0.36 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 30 V | 40 V |
| Continuous Drain Current (ID) at TA=25C | 39 A | β |
| Continuous Drain Current (ID) at TC=25C | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Static Drain-Source On-Resistance RDS(on) max at VGS=10V | 1.1 mOhm (typical 0.9 mOhm) | β |
| Gate-Source Threshold Voltage VGS(th) typ | 2 V | β |
| Gate-Source Voltage (VGS) max | +/-20 V | β |
| Total Gate Charge (Qg) typ | 72 nC | β |
| Power Dissipation at TA=25C | 3 W | β |
| Power Dissipation at TC=25C | 115 W | β |
| Operating Junction Temperature | -55C to +150C | β |
| Package | PG-TDSON-8 FL (8-pin, exposed drain pad) | PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | Trench MOSFET | β |
| Configuration | Single with built-in diode | β |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| RoHS Status | Compliant | β |
| Transistor Type | β | N-Channel MOSFET |
| Mode | β | Enhancement Mode |
| Continuous Drain Current (ID, Tc) | β | 50 A |
| Maximum Drain Current (silicon-limited, 25 Β°C) | β | 60 A |
| On-Resistance RDS(on) max @ VGS=10 V | β | 5.5 mΞ© |
| Gate Threshold VGS(th) | β | Logic Level (enhancement at β€ 4.5 V VGS) |
| Power Dissipation (Tc) | β | 42 W |
| Thermal Resistance Junction-to-Case RthJC | β | 3.6 K/W |
| Operating Temperature Range | β | -55 Β°C to +175 Β°C |
| AEC-Q101 Qualification | β | Qualified (automotive grade) |
| MSL (Moisture Sensitivity Level) | β | MSL1 |
| Peak Reflow Temperature | β | 260 Β°C |
| Avalanche Rating | β | 100 % Avalanche Tested |
| RoHS / REACH | β | RoHS Compliant (Green Product) |