BSC014N04LSATMA1 vs BSC035N04LSGATMA1 对比
详细并排对比 BSC014N04LSATMA1 出自 Infineon 和 BSC035N04LSGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC014N04LSATMA1 | BSC035N04LSGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.74 | $0.48 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | OptiMOS 3 |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at Ta | 32 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| RDS(on) max at VGS=10 V | 1.4 mOhm | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 96 W | — |
| Gate-Source Voltage (VGS) max | 20 V | — |
| 工作温度范围 | -55C to +175C | — |
| 封装 | SuperSO8 (TDSON-8 FL) 5x6 mm | PG-TDSON-8-1 (8-pin, exposed drain pad) |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | Trench (OptiMOS 5, thin-wafer) | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | 1 (unlimited) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Tc=25°C | — | 100 A |
| Continuous Drain Current (ID) at Ta=25°C | — | 21 A |
| RDS(on) Max at VGS=10V | — | 3.5 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 1.7 V (typ) |
| Power Dissipation (Pd) at Ta=25°C | — | 2.5 W |
| Power Dissipation (Pd) at Tc=25°C | — | 69 W |
| 工作结温 | — | -55°C to +150°C |
| Lead-Free | — | Yes |