BSC014N04LSATMA1 vs BSC035N04LSGATMA1 Comparison
Detailed side-by-side comparison of BSC014N04LSATMA1 by Infineon and BSC035N04LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC014N04LSATMA1 - 40V 1.4mOhm OptiMOS 5 N-Ch MOSFET | Infineon
BSC014N04LSATMA1 β ActiveInfineon
BSC035N04LSGATMA1 - 40V 100A 3.5mΞ© OptiMOS 3 N-MOSFET | Infineon
BSC035N04LSGATMA1 β ActiveSpecification Comparison
| Parameter | BSC014N04LSATMA1 | BSC035N04LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.74 | $0.48 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | OptiMOS 3 |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at Ta | 32 A | β |
| Continuous Drain Current (ID) at Tc | 100 A | β |
| RDS(on) max at VGS=10 V | 1.4 mOhm | β |
| Power Dissipation at Ta | 2.5 W | β |
| Power Dissipation at Tc | 96 W | β |
| Gate-Source Voltage (VGS) max | 20 V | β |
| Operating Temperature Range | -55C to +175C | β |
| Package | SuperSO8 (TDSON-8 FL) 5x6 mm | PG-TDSON-8-1 (8-pin, exposed drain pad) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | Trench (OptiMOS 5, thin-wafer) | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (unlimited) | β |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID) at Tc=25Β°C | β | 100 A |
| Continuous Drain Current (ID) at Ta=25Β°C | β | 21 A |
| RDS(on) Max at VGS=10V | β | 3.5 mΞ© |
| Gate Threshold Voltage (VGS(th)) | β | 1.7 V (typ) |
| Power Dissipation (Pd) at Ta=25Β°C | β | 2.5 W |
| Power Dissipation (Pd) at Tc=25Β°C | β | 69 W |
| Operating Junction Temperature | β | -55Β°C to +150Β°C |
| Lead-Free | β | Yes |