BSC014N04LSTATMA1 vs BSC014N04LSATMA1 对比

详细并排对比 BSC014N04LSTATMA1 出自 Infineon 和 BSC014N04LSATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC014N04LSTATMA1 BSC014N04LSTATMA1 - 40V 1.4mΩ OptiMOS 5 N-MOSFET | Infineon

BSC014N04LSTATMA1 - 40V 1.4mΩ OptiMOS 5 N-MOSFET | Infineon

BSC014N04LSTATMA1 ✓ 量产中
Infineon
BSC014N04LSATMA1 BSC014N04LSATMA1 - 40V 1.4mOhm OptiMOS 5 N-Ch MOSFET | Infineon

BSC014N04LSATMA1 - 40V 1.4mOhm OptiMOS 5 N-Ch MOSFET | Infineon

BSC014N04LSATMA1 ✓ 量产中

规格对比

参数 BSC014N04LSTATMA1 BSC014N04LSATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.41 $0.74
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC014N04LSTATMA1 —
Technology OptiMOS 5 (N-Channel Trench) Trench (OptiMOS 5, thin-wafer)
Drain-Source Voltage (VDS) 40 V 40 V
Gate-Source Voltage (VGS) ±20 V —
Continuous Drain Current (ID) @ TA=25°C 33 A —
Continuous Drain Current (ID) @ TC=25°C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance R DS(on) max @ VGS=10V 1.45 mΩ —
R DS(on) typical @ VGS=10V [DATA_NEEDED: RDS(on) typical] —
Power Dissipation (TA) 3 W —
Power Dissipation (TC) 115 W —
工作温度范围 -55°C to +150°C -55C to +175C
封装 PG-TDSON-8 FL (SuperSO8 5x6) SuperSO8 (TDSON-8 FL) 5x6 mm
安装类型 Surface Mount Surface Mount
引脚数量 8 —
RoHS 状态 Compliant Compliant
MSL 等级 MSL1 1 (unlimited)
Lead-Free Yes —
Series — OptiMOS 5
晶体管类型 — N-Channel MOSFET
Continuous Drain Current (ID) at Ta — 32 A
Continuous Drain Current (ID) at Tc — 100 A
RDS(on) max at VGS=10 V — 1.4 mOhm
Power Dissipation at Ta — 2.5 W
Power Dissipation at Tc — 96 W
Gate-Source Voltage (VGS) max — 20 V

数据手册与资源

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