BSC014N04LSTATMA1 vs BSC014N04LSATMA1 Comparison

Detailed side-by-side comparison of BSC014N04LSTATMA1 by Infineon and BSC014N04LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC014N04LSTATMA1 BSC014N04LSTATMA1 - 40V 1.4mΩ OptiMOS 5 N-MOSFET | Infineon

BSC014N04LSTATMA1 - 40V 1.4mΩ OptiMOS 5 N-MOSFET | Infineon

BSC014N04LSTATMA1 ✓ Active

Specification Comparison

Parameter BSC014N04LSTATMA1 BSC014N04LSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC014N04LSTATMA1 —
Technology OptiMOS 5 (N-Channel Trench) Trench (OptiMOS 5, thin-wafer)
Drain-Source Voltage (VDS) 40 V 40 V
Gate-Source Voltage (VGS) ±20 V —
Continuous Drain Current (ID) @ TA=25°C 33 A —
Continuous Drain Current (ID) @ TC=25°C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance R DS(on) max @ VGS=10V 1.45 mΩ —
R DS(on) typical @ VGS=10V [DATA_NEEDED: RDS(on) typical] —
Power Dissipation (TA) 3 W —
Power Dissipation (TC) 115 W —
Operating Temperature Range -55°C to +150°C -55C to +175C
Package PG-TDSON-8 FL (SuperSO8 5x6) SuperSO8 (TDSON-8 FL) 5x6 mm
Mounting Type Surface Mount Surface Mount
Pin Count 8 —
RoHS Status Compliant Compliant
MSL Level MSL1 1 (unlimited)
Lead-Free Yes —
Series — OptiMOS 5
Transistor Type — N-Channel MOSFET
Continuous Drain Current (ID) at Ta — 32 A
Continuous Drain Current (ID) at Tc — 100 A
RDS(on) max at VGS=10 V — 1.4 mOhm
Power Dissipation at Ta — 2.5 W
Power Dissipation at Tc — 96 W
Gate-Source Voltage (VGS) max — 20 V

Datasheets & Resources

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