BSC014NE2LSIATMA1 vs BSC019N04LSTATMA1 对比
详细并排对比 BSC014NE2LSIATMA1 出自 Infineon 和 BSC019N04LSTATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC014NE2LSIATMA1 | BSC019N04LSTATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.48 | $1.21 |
| Technology | N-Channel MOSFET (OptiMOS 25V) | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | 25 V | 40 V |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current (ID, Ta) | 33 A | — |
| Continuous Drain Current (ID, Tc) | [DATA_NEEDED: Tc condition rating] | — |
| Pulsed Drain Current (IDM, Tc) | 100 A | — |
| On-State Resistance RDS(on) | 1.4 mOhm (typ) at VGS = 10 V | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ at VGS=10V] | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 74 W | — |
| 工作结温 | -55 °C to +150 °C | — |
| 封装 | PG-TDSON-8-7 (SuperSO8) | TDSON-8 (SuperSO8) 5x6 mm |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | 1 (per JEDEC J-STD-020) | 1 (unlimited) |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Continuous Drain Current (ID, Tc=25C) | — | 161 A |
| Continuous Drain Current (ID, Ta=25C) | — | 28 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed ID limit] |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.9 mOhm |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate Threshold Voltage VGS(th) typ | — | 1.7 V |
| Total Gate Charge Qg typ | — | 85 nC |
| Power Dissipation PD (Tc=25C) | — | 94 W |
| 工作温度范围 | — | -55 C to +150 C |
| Lead-Free / Halogen-Free | — | Yes / Yes |
| Avalanche Rated | — | Yes |