BSC020N03LSGATMA1 vs IQE008N03LM5ATMA1 对比

详细并排对比 BSC020N03LSGATMA1 出自 Infineon 和 IQE008N03LM5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IQE008N03LM5ATMA1 IQE008N03LM5ATMA1 - 30V 0.85mΩ OptiMOS 5 N-Ch MOSFET | Infineon

IQE008N03LM5ATMA1 - 30V 0.85mΩ OptiMOS 5 N-Ch MOSFET | Infineon

IQE008N03LM5ATMA1 ✓ 量产中

规格对比

参数 BSC020N03LSGATMA1 IQE008N03LM5ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.42 $0.94
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3 —
FET Type N-Channel —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at Ta=25C 28 A —
Continuous Drain Current (ID) at Tc=25C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] —
Gate-Source Voltage (VGS) +/-20 V —
Gate Threshold Voltage (VGS(th)) 1 V to 2.2 V (typical range, per datasheet) 2 V (at 250 µA per LCSC snippet)
On-State Resistance (RDS(on)) at VGS=10V approximately 2.0 mOhm —
Power Dissipation (PD) at Ta=25C 2.5 W —
Power Dissipation (PD) at Tc=25C 96 W —
工作温度范围 -55 C to +150 C (junction) -55°C to +150°C (typical MOSFET junction rating)
封装 / 外壳 PG-TDSON-8-1 (TDSON EP, 5 mm x 6 mm) —
安装类型 Surface Mount Surface Mount
Packaging Tape & Reel —
RoHS 状态 Compliant Compliant (per LCSC listing)
MSL 等级 1 (per JEDEC J-STD-020, per Infineon datasheet) [DATA_NEEDED: MSL level]
Product Family — OptiMOS 5
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 30 V
Continuous Drain Current (ID) at TA=25°C — 27 A
Continuous Drain Current (ID) at TC=25°C — 253 A
On-Resistance RDS(on) Typical — 0.85 mΩ (at 20 A, VGS=10 V per LCSC datasheet snippet)
Power Dissipation at TA=25°C — 2.1 W
Power Dissipation at TC=25°C — 89 W
封装 — PG-TSON-8-4 (3.3 x 3.3 mm), Source-Down
Gate-Source Voltage (VGS) Max — ±20 V (typical MOSFET rating)
Technology — OptiMOS 5, Source-Down

数据手册与资源

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