BSC020N03LSGATMA1 vs IQE008N03LM5ATMA1 Comparación
Comparación detallada lado a lado de BSC020N03LSGATMA1 por Infineon y IQE008N03LM5ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
BSC020N03LSGATMA1 - 30V N-Channel OptiMOS 3, 100A TDSON-8 | Infineon
BSC020N03LSGATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | BSC020N03LSGATMA1 | IQE008N03LM5ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,42 | $0,94 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Ta=25C | 28 A | — |
| Continuous Drain Current (ID) at Tc=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | 1 V to 2.2 V (typical range, per datasheet) | 2 V (at 250 µA per LCSC snippet) |
| On-State Resistance (RDS(on)) at VGS=10V | approximately 2.0 mOhm | — |
| Power Dissipation (PD) at Ta=25C | 2.5 W | — |
| Power Dissipation (PD) at Tc=25C | 96 W | — |
| Rango de temperatura de funcionamiento | -55 C to +150 C (junction) | -55°C to +150°C (typical MOSFET junction rating) |
| Encapsulado / Carcasa | PG-TDSON-8-1 (TDSON EP, 5 mm x 6 mm) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Packaging | Tape & Reel | — |
| Estado RoHS | Compliant | Compliant (per LCSC listing) |
| Nivel MSL | 1 (per JEDEC J-STD-020, per Infineon datasheet) | [DATA_NEEDED: MSL level] |
| Product Family | — | OptiMOS 5 |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at TA=25°C | — | 27 A |
| Continuous Drain Current (ID) at TC=25°C | — | 253 A |
| On-Resistance RDS(on) Typical | — | 0.85 mΩ (at 20 A, VGS=10 V per LCSC datasheet snippet) |
| Power Dissipation at TA=25°C | — | 2.1 W |
| Power Dissipation at TC=25°C | — | 89 W |
| Encapsulado | — | PG-TSON-8-4 (3.3 x 3.3 mm), Source-Down |
| Gate-Source Voltage (VGS) Max | — | ±20 V (typical MOSFET rating) |
| Technology | — | OptiMOS 5, Source-Down |