BSC020N03LSGATMA1 vs IQE008N03LM5ATMA1 Comparison
Detailed side-by-side comparison of BSC020N03LSGATMA1 by Infineon and IQE008N03LM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC020N03LSGATMA1
BSC020N03LSGATMA1 - 30V N-Channel OptiMOS 3, 100A TDSON-8 | Infineon
BSC020N03LSGATMA1 β ActiveInfineon
IQE008N03LM5ATMA1
IQE008N03LM5ATMA1 - 30V 0.85mΞ© OptiMOS 5 N-Ch MOSFET | Infineon
IQE008N03LM5ATMA1 β ActiveSpecification Comparison
| Parameter | BSC020N03LSGATMA1 | IQE008N03LM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.42 | $0.94 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) at Ta=25C | 28 A | β |
| Continuous Drain Current (ID) at Tc=25C | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | β |
| Gate-Source Voltage (VGS) | +/-20 V | β |
| Gate Threshold Voltage (VGS(th)) | 1 V to 2.2 V (typical range, per datasheet) | 2 V (at 250 Β΅A per LCSC snippet) |
| On-State Resistance (RDS(on)) at VGS=10V | approximately 2.0 mOhm | β |
| Power Dissipation (PD) at Ta=25C | 2.5 W | β |
| Power Dissipation (PD) at Tc=25C | 96 W | β |
| Operating Temperature Range | -55 C to +150 C (junction) | -55Β°C to +150Β°C (typical MOSFET junction rating) |
| Package / Case | PG-TDSON-8-1 (TDSON EP, 5 mm x 6 mm) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Packaging | Tape & Reel | β |
| RoHS Status | Compliant | Compliant (per LCSC listing) |
| MSL Level | 1 (per JEDEC J-STD-020, per Infineon datasheet) | [DATA_NEEDED: MSL level] |
| Product Family | β | OptiMOS 5 |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) Max | β | 30 V |
| Continuous Drain Current (ID) at TA=25Β°C | β | 27 A |
| Continuous Drain Current (ID) at TC=25Β°C | β | 253 A |
| On-Resistance RDS(on) Typical | β | 0.85 mΞ© (at 20 A, VGS=10 V per LCSC datasheet snippet) |
| Power Dissipation at TA=25Β°C | β | 2.1 W |
| Power Dissipation at TC=25Β°C | β | 89 W |
| Package | β | PG-TSON-8-4 (3.3 x 3.3 mm), Source-Down |
| Gate-Source Voltage (VGS) Max | β | Β±20 V (typical MOSFET rating) |
| Technology | β | OptiMOS 5, Source-Down |