BSC027N06LS5ATMA1 vs IAUC41N06S5L100ATMA1 对比

详细并排对比 BSC027N06LS5ATMA1 出自 Infineon 和 IAUC41N06S5L100ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC027N06LS5ATMA1 BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 ✓ 量产中
Infineon
IAUC41N06S5L100ATMA1 IAUC41N06S5L100ATMA1 - 60V 41A N-Ch OptiMOS 5 MOSFET | Infineon

IAUC41N06S5L100ATMA1 - 60V 41A N-Ch OptiMOS 5 MOSFET | Infineon

IAUC41N06S5L100ATMA1 ✓ 量产中

规格对比

参数 BSC027N06LS5ATMA1 IAUC41N06S5L100ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.66 $0.43
Manufacturer Infineon Technologies —
Series OptiMOS™ 5 —
Part Status Active —
FET Type N-Channel —
Technology MOSFET (Metal Oxide) OptiMOS 5 (Trench MOSFET)
Drain-Source Voltage (VDS) 60 V 60 V
Gate-Source Voltage (VGS) ±20 V [DATA_NEEDED: max VGS rating]
Gate Threshold Voltage (VGS(th)) Logic-level [DATA_NEEDED: VGS(th) typical]
Continuous Drain Current (ID) at Tc=25°C 100 A —
Continuous Drain Current (ID) at Tc=100°C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM] —
On-Resistance (RDS(on)) max @ VGS=10V 2.7 mOhm —
On-Resistance (RDS(on)) @ VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Power Dissipation (PD) at Tc=25°C 83 W —
工作温度范围 -55°C to +150°C -55C to +175C
封装 / 外壳 PG-TDSON-8-7 (SuperSO8 5x6) —
安装类型 Surface Mount Surface Mount
引脚数量 8 —
Gate Charge (Qg) [DATA_NEEDED: total Qg] —
Avalanche Energy Rated Yes —
RoHS 状态 Compliant Compliant
MSL (Moisture Sensitivity Level) MSL1 —
Continuous Drain Current (ID, Tj) — 41 A
Power Dissipation (PD, TC) — 42 W
On-State Resistance (RDS(on)) max — 10 mOhm at VGS=10 V
Total Gate Charge (Qg) — [DATA_NEEDED: Qg total]
封装 — PG-TDSON-8-33 (TDSON-8, 5x6 mm)
Channel Type — N-Channel
MSL 等级 — [DATA_NEEDED: MSL rating]
Automotive Qualified — Yes (AEC-Q101 automotive grade)
Interconnect — Copper clip (low-inductance)

数据手册与资源

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