BSC027N06LS5ATMA1 vs IPG20N06S2L65AATMA1 对比
详细并排对比 BSC027N06LS5ATMA1 出自 Infineon 和 IPG20N06S2L65AATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC027N06LS5ATMA1 | IPG20N06S2L65AATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.66 | $0.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS™ 5 | OptiMOS |
| Part Status | Active | — |
| FET Type | N-Channel | Dual N-Channel (Half Bridge / Independent) |
| Technology | MOSFET (Metal Oxide) | OptiMOS Trench MOSFET |
| Drain-Source Voltage (VDS) | 60 V | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | Logic-level | — |
| Continuous Drain Current (ID) at Tc=25°C | 100 A | — |
| Continuous Drain Current (ID) at Tc=100°C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM] | — |
| On-Resistance (RDS(on)) max @ VGS=10V | 2.7 mOhm | — |
| On-Resistance (RDS(on)) @ VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Power Dissipation (PD) at Tc=25°C | 83 W | — |
| 工作温度范围 | -55°C to +150°C | — |
| 封装 / 外壳 | PG-TDSON-8-7 (SuperSO8 5x6) | — |
| 安装类型 | Surface Mount | Surface Mount |
| 引脚数量 | 8 | — |
| Gate Charge (Qg) | [DATA_NEEDED: total Qg] | — |
| Avalanche Energy Rated | Yes | — |
| RoHS 状态 | Compliant | Compliant (Green Product) |
| MSL (Moisture Sensitivity Level) | MSL1 | — |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) | — | 20 A (per channel) |
| Power Dissipation (PD) | — | 43 W |
| Gate Threshold (VGS(th)) | — | Logic-Level |
| 封装 | — | PG-TDSON-8-10 (TDSON-8 EP, wettable flank) |
| 工作温度 | — | -55 C to +175 C |
| AEC-Q101 Qualification | — | Yes |
| MSL 等级 | — | MSL1 (peak reflow 260 C) |
| Avalanche Tested | — | 100% (per datasheet) |
| AOI Compatible | — | Yes (wettable flank) |