BSC027N10NS5ATMA1 vs BSC033N08NS5SCATMA1 对比

详细并排对比 BSC027N10NS5ATMA1 出自 Infineon 和 BSC033N08NS5SCATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC033N08NS5SCATMA1 BSC033N08NS5SCATMA1 - 80V 3.3mOhm N-Ch MOSFET | Infineon

BSC033N08NS5SCATMA1 - 80V 3.3mOhm N-Ch MOSFET | Infineon

BSC033N08NS5SCATMA1 ✓ 量产中

规格对比

参数 BSC027N10NS5ATMA1 BSC033N08NS5SCATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 不推荐新设计 有效
库存状态 有库存 有库存
单价(USD) $1.10 $0.62
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC027N10NS5ATMA1 —
Technology OptiMOS 5 (100V) Trench (OptiMOS 5)
Channel Type N-Channel —
Drain-Source Voltage (VDS) 100 V 80 V
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS max rating] —
Continuous Drain Current (ID) at Ta 23 A —
Continuous Drain Current (ID) at Tc 100 A —
Pulsed Drain Current (IDM) 194 A —
On-Resistance RDS(on) Max at VGS=10V 2.7 mOhm —
Power Dissipation (Ta) 3 W —
Power Dissipation (Tc) 214 W 136 W
封装 PG-TSON-8-3 (SuperSO8 5x6 mm) PG-WSON-8-2 (SuperSO8 DSC)
安装类型 Surface Mount Surface Mount
工作温度范围 [DATA_NEEDED: Tj min/max] -55C to +175C
RoHS 状态 Compliant Compliant
MSL 等级 [DATA_NEEDED: MSL rating] 1
Qualification Industrial (AEC-Q101 variant BSC027N10NS5 exists separately) —
Series — OptiMOS 5
FET Type — N-Channel
Continuous Drain Current (Tc) — 144 A
RDS(on) max @ VGS=10V — 3.3 mOhm
Gate-Source Voltage (VGS) — +/- 20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Thermal Resistance RthJC — 0.86 K/W
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical value]

数据手册与资源

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