BSC027N10NS5ATMA1 vs BSC118N10NSGATMA1 对比
详细并排对比 BSC027N10NS5ATMA1 出自 Infineon 和 BSC118N10NSGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC027N10NS5ATMA1 | BSC118N10NSGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 不推荐新设计 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.10 | $0.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC027N10NS5ATMA1 | — |
| Technology | OptiMOS 5 (100V) | Trench MOSFET |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | — |
| Continuous Drain Current (ID) at Ta | 23 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Pulsed Drain Current (IDM) | 194 A | — |
| On-Resistance RDS(on) Max at VGS=10V | 2.7 mOhm | — |
| Power Dissipation (Ta) | 3 W | — |
| Power Dissipation (Tc) | 214 W | — |
| 封装 | PG-TSON-8-3 (SuperSO8 5x6 mm) | PG-TDSON-8-1 (TDSON EP, 5x6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | [DATA_NEEDED: Tj min/max] | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | [DATA_NEEDED: MSL rating] | — |
| Qualification | Industrial (AEC-Q101 variant BSC027N10NS5 exists separately) | — |
| Product Family | — | OptiMOS 2 |
| FET Type | — | N-Channel |
| Mode | — | Enhancement (Normal Level) |
| Continuous Drain Current (ID) at Ta=25C | — | 11 A |
| Continuous Drain Current (ID) at Tc=25C | — | 71 A |
| Power Dissipation (PD) at Tc=25C | — | 114 W |
| 工作结温 | — | -55 C to +150 C |
| Lead Plating | — | Pb-free |
| 无卤 | — | Yes |
| JEDEC Qualification | — | Qualified per target application |
| Target Application | — | High-frequency SMPS, synchronous rectification |
| Gate Charge x RDS(on) FOM | — | Excellent (per datasheet) |