BSC039N06NSATMA1 vs BSC030N08NS5ATMA1 对比
详细并排对比 BSC039N06NSATMA1 出自 Infineon 和 BSC030N08NS5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC039N06NSATMA1 | BSC030N08NS5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.46 | $0.55 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at TA | 19 A | — |
| Continuous Drain Current (ID) at TC | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed value at TC] | — |
| On-Resistance RDS(on) max at VGS=10V | 3.9 mOhm | — |
| On-Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | — |
| Power Dissipation at TA (PD) | 2.5 W | — |
| Power Dissipation at TC (PD) | 69 W | — |
| 工作结温 | -55C to +150C | — |
| 封装 | PG-TDSON-8-6 (TDSON EP, 5x6 mm) | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| 引脚数 | 8 | — |
| Gate Drive Voltage (VGS) | ±20 V max | — |
| Technology | OptiMOS 5 (TrenchFET-style) | OptiMOS 5 |
| MSL 等级 | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| RoHS 状态 | Compliant | Compliant |
| Product Type | — | N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) max | — | 80 V |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Pulsed Drain Current (ID,pulse) | — | 161 A |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| RDS(on) max at VGS=10 V | — | 3.0 mOhm |
| RDS(on) max at VGS=7 V | — | [DATA_NEEDED: RDS(on) at VGS=7V] |
| Power Dissipation (Ta=25C, 1.5mm FR4) | — | 2.5 W |
| Power Dissipation (TC=25C) | — | 139 W |
| Operating Temperature Range (TJ) | — | -55C to +150C |
| 无卤 | — | Yes |
| Lead-Free | — | Yes |
| Gate Drive Logic | — | Standard 10V, compatible with 12V drive |
| Optimized Application | — | Synchronous Rectification |