BSC040N10NS5ATMA1 vs BSC072N08NS5ATMA1 对比
详细并排对比 BSC040N10NS5ATMA1 出自 Infineon 和 BSC072N08NS5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC040N10NS5ATMA1 | BSC072N08NS5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.93 | $0.46 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 | OptiMOS 5 |
| Drain-Source Voltage (VDS) | 100 V | — |
| Maximum On-Resistance (RDS(on)) | 4 mOhm | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Continuous Drain Current (ID) max | 136 A | — |
| Power Dissipation (Ta) | 2.5 W | 2.5 W |
| Power Dissipation (Tc) | 139 W | 69 W |
| 封装 | PG-TDSON-8-7 (SuperSO8 5x6) / TDSON EP-8 | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55C to +150C | [DATA_NEEDED: full min/max operating Tj] |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | [DATA_NEEDED: typical VGS(th) value] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | [DATA_NEEDED: typical Qg] |
| Output Capacitance Reduction | Up to 44% vs previous generation | — |
| RDS(on) Reduction | Up to 43% vs previous generation | — |
| RoHS 状态 | Compliant | Compliant |
| Automotive Qualification | AEC-Q101 (per Infineon OptiMOS 5 family) | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | BSC072N08NS5 (OptiMOS 5) |
| 晶体管类型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | — | 80 V |
| Continuous Drain Current (ID) at Tc | — | 74 A |
| Drain-Source On-Resistance (RDS(on)) Max | — | 7.2 mOhm at VGS=10V |
| MSL 等级 | — | [DATA_NEEDED: MSL rating] |
| Shipping Pack | — | Tape & Reel (ATMA1) |
| Standard Pack Quantity | — | 5000 |