BSC042NE7NS3GATMA1 vs BSC0993NDATMA1 对比

详细并排对比 BSC042NE7NS3GATMA1 出自 Infineon 和 BSC0993NDATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC042NE7NS3GATMA1 BSC042NE7NS3GATMA1 - 75V N-Ch OptiMOS 3 MOSFET | Infineon

BSC042NE7NS3GATMA1 - 75V N-Ch OptiMOS 3 MOSFET | Infineon

BSC042NE7NS3GATMA1 ✓ 量产中

规格对比

参数 BSC042NE7NS3GATMA1 BSC0993NDATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.24 $1.32
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC042NE7NS3GATMA1 —
晶体管类型 N-Channel MOSFET —
Technology OptiMOS 3 OptiMOS 5 trench MOSFET
Drain-Source Voltage (VDS) 75 V —
Continuous Drain Current (ID) at Ta 19 A —
Continuous Drain Current (ID) at Tc 100 A —
RDS(on) max at VGS=10V 4.2 mOhm —
Gate-Source Voltage (VGS) max +/-20 V —
Gate Threshold Voltage (VGS(th)) typ 1.7 V —
Power Dissipation (PD) at Ta 2.5 W —
Power Dissipation (PD) at Tc 125 W —
工作温度范围 -55C to +150C -55C to +150C (junction)
封装 PG-TDSON-8-1 (SuperSO8 5x6 mm) PG-TISON-8
安装类型 Surface Mount Surface Mount
MSL 等级 1 [DATA_NEEDED: MSL level]
RoHS 状态 Compliant Compliant
Product Series — OptiMOS 5 30V
Configuration — Dual N-Channel (Array)
Drain-Source Voltage (Vds) — 30 V
Continuous Drain Current (Id) @ Ta — 17 A
Channel Mode — Enhancement
ESD Protection — Yes (integrated)
Lead-Free — Yes
Rds(on) max @ Vgs=10V — [DATA_NEEDED: Rds(on) value]
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) value]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg value]

数据手册与资源

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