BSC047N08NS3GATMA1 vs BSC022N04LS6ATMA1 对比

详细并排对比 BSC047N08NS3GATMA1 出自 Infineon 和 BSC022N04LS6ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC047N08NS3GATMA1 BSC047N08NS3GATMA1 - 80V 100A 4.7mOhm N-Ch MOSFET | Infineon

BSC047N08NS3GATMA1 - 80V 100A 4.7mOhm N-Ch MOSFET | Infineon

BSC047N08NS3GATMA1 ✓ 量产中
Infineon
BSC022N04LS6ATMA1 BSC022N04LS6ATMA1 - 40V 2.2mOhm OptiMOS 6 N-Ch MOSFET | Infineon

BSC022N04LS6ATMA1 - 40V 2.2mOhm OptiMOS 6 N-Ch MOSFET | Infineon

BSC022N04LS6ATMA1 ✓ 量产中

规格对比

参数 BSC047N08NS3GATMA1 BSC022N04LS6ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.46 $0.66
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC047N08NS3GATMA1 —
Technology OptiMOS™ 3 (N-channel trench) OptiMOS™ 6 (N-channel trench)
Drain-Source Voltage (VDS) max 80 V —
Continuous Drain Current (ID) at Tc 100 A 100 A
Continuous Drain Current (ID) at Ta 18 A 27 A
On-Resistance RDS(on) max 4.7 mOhm at VGS=10 V 2.2 mOhm at VGS=10 V
Power Dissition (Tc) 125 W —
Power Dissipation (Ta) 2.5 W 3 W
Gate Threshold Voltage (VGS th) Normal level (typ 1.7 V) —
Avalanche Rated 100% tested —
封装 PG-TDSON-8-1 (SuperSO8 5x6) SuperSO8 5x6 (PG-TDSON-8-1)
安装类型 Surface Mount Surface Mount
工作温度范围 -55 °C to +175 °C (Tj) —
RoHS / Halogen-Free RoHS compliant, Halogen-free —
Drain-Source Voltage (VDS) — 40 V
Maximum Pulsed Drain Current (IDM) — 139 A
Power Dissipation (Tc) — 79 W
Channel Type — N-Channel
引脚数量 — 8
工作温度 — -55 C to +175 C (junction)
RoHS 状态 — Compliant

数据手册与资源

浏览全部产品 创建 BOM 获取报价