BSC047N08NS3GATMA1 vs BSC042NE7NS3GATMA1 对比
详细并排对比 BSC047N08NS3GATMA1 出自 Infineon 和 BSC042NE7NS3GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC047N08NS3GATMA1 | BSC042NE7NS3GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.46 | $1.24 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC047N08NS3GATMA1 | BSC042NE7NS3GATMA1 |
| Technology | OptiMOS™ 3 (N-channel trench) | OptiMOS 3 |
| Drain-Source Voltage (VDS) max | 80 V | — |
| Continuous Drain Current (ID) at Tc | 100 A | 100 A |
| Continuous Drain Current (ID) at Ta | 18 A | 19 A |
| On-Resistance RDS(on) max | 4.7 mOhm at VGS=10 V | — |
| Power Dissition (Tc) | 125 W | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Gate Threshold Voltage (VGS th) | Normal level (typ 1.7 V) | — |
| Avalanche Rated | 100% tested | — |
| 封装 | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55 °C to +175 °C (Tj) | -55C to +150C |
| RoHS / Halogen-Free | RoHS compliant, Halogen-free | — |
| 晶体管类型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 75 V |
| RDS(on) max at VGS=10V | — | 4.2 mOhm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) typ | — | 1.7 V |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 125 W |
| MSL 等级 | — | 1 |
| RoHS 状态 | — | Compliant |