BSC047N08NS3GATMA1 vs BSC042NE7NS3GATMA1 Comparison

Detailed side-by-side comparison of BSC047N08NS3GATMA1 by Infineon and BSC042NE7NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC047N08NS3GATMA1 BSC047N08NS3GATMA1 - 80V 100A 4.7mOhm N-Ch MOSFET | Infineon

BSC047N08NS3GATMA1 - 80V 100A 4.7mOhm N-Ch MOSFET | Infineon

BSC047N08NS3GATMA1 βœ“ Active
Infineon
BSC042NE7NS3GATMA1

BSC042NE7NS3GATMA1 - 75V N-Ch OptiMOS 3 MOSFET | Infineon

BSC042NE7NS3GATMA1 βœ“ Active

Specification Comparison

Parameter BSC047N08NS3GATMA1 BSC042NE7NS3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.46 $1.24
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC047N08NS3GATMA1 BSC042NE7NS3GATMA1
Technology OptiMOSβ„’ 3 (N-channel trench) OptiMOS 3
Drain-Source Voltage (VDS) max 80 V β€”
Continuous Drain Current (ID) at Tc 100 A 100 A
Continuous Drain Current (ID) at Ta 18 A 19 A
On-Resistance RDS(on) max 4.7 mOhm at VGS=10 V β€”
Power Dissition (Tc) 125 W β€”
Power Dissipation (Ta) 2.5 W β€”
Gate Threshold Voltage (VGS th) Normal level (typ 1.7 V) β€”
Avalanche Rated 100% tested β€”
Package PG-TDSON-8-1 (SuperSO8 5x6) PG-TDSON-8-1 (SuperSO8 5x6 mm)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 Β°C to +175 Β°C (Tj) -55C to +150C
RoHS / Halogen-Free RoHS compliant, Halogen-free β€”
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (VDS) β€” 75 V
RDS(on) max at VGS=10V β€” 4.2 mOhm
Gate-Source Voltage (VGS) max β€” +/-20 V
Gate Threshold Voltage (VGS(th)) typ β€” 1.7 V
Power Dissipation (PD) at Ta β€” 2.5 W
Power Dissipation (PD) at Tc β€” 125 W
MSL Level β€” 1
RoHS Status β€” Compliant

Datasheets & Resources

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