BSC047N08NS3GATMA1 vs BSC060N10NS3GATMA1 对比

详细并排对比 BSC047N08NS3GATMA1 出自 Infineon 和 BSC060N10NS3GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC047N08NS3GATMA1 BSC047N08NS3GATMA1 - 80V 100A 4.7mOhm N-Ch MOSFET | Infineon

BSC047N08NS3GATMA1 - 80V 100A 4.7mOhm N-Ch MOSFET | Infineon

BSC047N08NS3GATMA1 ✓ 量产中
Infineon
BSC060N10NS3GATMA1 BSC060N10NS3GATMA1 - 100V 6mOhm OptiMOS 3 N-FET | Infineon

BSC060N10NS3GATMA1 - 100V 6mOhm OptiMOS 3 N-FET | Infineon

BSC060N10NS3GATMA1 ✓ 量产中

规格对比

参数 BSC047N08NS3GATMA1 BSC060N10NS3GATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.46 $0.78
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC047N08NS3GATMA1 —
Technology OptiMOS™ 3 (N-channel trench) OptiMOS 3 (Trench MOSFET)
Drain-Source Voltage (VDS) max 80 V —
Continuous Drain Current (ID) at Tc 100 A —
Continuous Drain Current (ID) at Ta 18 A —
On-Resistance RDS(on) max 4.7 mOhm at VGS=10 V —
Power Dissition (Tc) 125 W —
Power Dissipation (Ta) 2.5 W —
Gate Threshold Voltage (VGS th) Normal level (typ 1.7 V) —
Avalanche Rated 100% tested —
封装 PG-TDSON-8-1 (SuperSO8 5x6) PG-TDSON-8-1 (SuperSO8 5x6 mm)
安装类型 Surface Mount Surface Mount
工作温度范围 -55 °C to +175 °C (Tj) —
RoHS / Halogen-Free RoHS compliant, Halogen-free —
Part Family — OptiMOS 3
FET Type — N-Channel
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID, Ta) — 14.9 A
Continuous Drain Current (ID, Tc) — 90 A
On-Resistance RDS(on) Max @ VGS=10V — 6 mOhm
Power Dissipation (PD, Tc=25C) — 125 W
Gate Threshold Voltage VGS(th) — 2.0 V to 3.5 V
工作结温 — -55 C to +150 C
MSL 等级 — [DATA_NEEDED: MSL rating]
RoHS 状态 — Compliant
Lead-Free — Yes
无卤 — [DATA_NEEDED: halogen status]
Gate Charge (Qg, typ) — [DATA_NEEDED: Qg value]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss value]
Avalanche Energy (EAS) — [DATA_NEEDED: EAS value]

数据手册与资源

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