BSC052N08NS5ATMA1 vs BSC059N04LSGATMA1 对比
详细并排对比 BSC052N08NS5ATMA1 出自 Infineon 和 BSC059N04LSGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC052N08NS5ATMA1 | BSC059N04LSGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.52 | $0.39 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSC052N08NS5ATMA1 | — |
| Technology | OptiMOS 5 | OptiMOS 3 (N-channel trench MOSFET) |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 80 V | 40 V |
| Continuous Drain Current (ID, Tc) | 95 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max @ VGS=10V | 5.2 mΩ | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage VGS(th) typ | 2.5-3.0 V | — |
| Total Power Dissipation (Tc) | 83 W | — |
| Total Power Dissipation (Ta) | 2.5 W | — |
| 工作结温 | -55C to +150C | — |
| 封装 | PG-TDSON-8 (SuperSO8) 5x6 mm | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | 1 (unlimited) | 1 (per JEDEC J-STD-020) |
| Continuous Drain Current (ID, Tc=25C) | — | 73 A |
| Continuous Drain Current (ID, Ta=25C) | — | 16 A |
| On-State Resistance RDS(on) max @ VGS=10V | — | 5.9 mOhm |
| Power Dissipation (Tc=25C) | — | 50 W |
| Power Dissipation (Ta=25C) | — | 2.5 W |
| Gate-Source Threshold Voltage VGS(th) | — | 1.2 V to 2.0 V (typ) |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg total, typical nC] |
| 工作温度范围 | — | -55 C to +150 C |
| REACH Status | — | Compliant |
| Channel Type | — | N-Channel |