BSC054N04NSGATMA1 vs IRF8736TRPBF 对比
详细并排对比 BSC054N04NSGATMA1 出自 Infineon 和 IRF8736TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC054N04NSGATMA1 | IRF8736TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.42 | $0.27 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSC054N04NSGATMA1 | — |
| Technology | OptiMOS 3 (N-Channel Trench MOSFET) | StrongIRFET / HEXFET |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at Tc=25C | 81 A | — |
| Continuous Drain Current (ID) at Ta=25C | 17 A | — |
| On-Resistance RDS(on) max at VGS=10V | 5.4 mOhm | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Power Dissipation at Tc=25C | 57 W | — |
| Power Dissipation at Ta=25C | 2.5 W | — |
| 工作温度范围 | -55C to +150C | -55C to +150C (junction) |
| 封装 | PG-TDSON-8-5 (SuperSO8 5x6 mm) | SO-8 (8-SO, MS-012AA) |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| RoHS 状态 | Compliant | — |
| Gate Drive Voltage (recommended) | 10 V | — |
| Lead-Free Reflow | Yes | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 18 A |
| Power Dissipation (PD) Max at TA=25C | — | 2.5 W |
| Drain-Source On-Resistance (RDS(on)) Max | — | 4.8 mOhm at VGS = 10V |
| Gate Charge (Qg) Typical | — | 17 nC |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free, RoHS compliant) |
| Avalanche Rated | — | Yes (fully characterized avalanche voltage) |
| Configuration | — | Single |
| Packaging | — | Tape & Reel (TRPBF suffix) |