BSC060N10NS3GATMA1 vs BSC094N06LS5ATMA1 对比

详细并排对比 BSC060N10NS3GATMA1 出自 Infineon 和 BSC094N06LS5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC060N10NS3GATMA1 BSC060N10NS3GATMA1 - 100V 6mOhm OptiMOS 3 N-FET | Infineon

BSC060N10NS3GATMA1 - 100V 6mOhm OptiMOS 3 N-FET | Infineon

BSC060N10NS3GATMA1 ✓ 量产中

规格对比

参数 BSC060N10NS3GATMA1 BSC094N06LS5ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.78 $0.38
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 3 —
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID, Ta) 14.9 A —
Continuous Drain Current (ID, Tc) 90 A —
On-Resistance RDS(on) Max @ VGS=10V 6 mOhm —
Power Dissipation (PD, Tc=25C) 125 W —
Gate Threshold Voltage VGS(th) 2.0 V to 3.5 V —
工作结温 -55 C to +150 C -55 °C to +150 °C
Technology OptiMOS 3 (Trench MOSFET) OptiMOS™ 5 (logic-level)
封装 PG-TDSON-8-1 (SuperSO8 5x6 mm) PG-TDSON-8-6 (SuperSO8 5x6)
安装类型 Surface Mount Surface Mount
MSL 等级 [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
RoHS 状态 Compliant Compliant
Lead-Free Yes —
无卤 [DATA_NEEDED: halogen status] —
Gate Charge (Qg, typ) [DATA_NEEDED: Qg value] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss value] —
Avalanche Energy (EAS) [DATA_NEEDED: EAS value] —
Part Number — BSC094N06LS5ATMA1
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at TC=25°C — 47 A
Continuous Drain Current (ID) at TC=100°C — [DATA_NEEDED: ID at TC=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
RDS(on) max at VGS=10 V — 9.4 mΩ
RDS(on) max at VGS=4.5 V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/range]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typ]
Power Dissipation (PD) at TC=25°C — 36 W

数据手册与资源

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