BSC060N10NS3GATMA1 vs BSC094N06LS5ATMA1 Comparison
Detailed side-by-side comparison of BSC060N10NS3GATMA1 by Infineon and BSC094N06LS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC094N06LS5ATMA1 - 60V 9.4mΩ 47A N-Channel OptiMOS 5 | Infineon
BSC094N06LS5ATMA1 ✓ ActiveSpecification Comparison
| Parameter | BSC060N10NS3GATMA1 | BSC094N06LS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $0.38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 3 | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, Ta) | 14.9 A | — |
| Continuous Drain Current (ID, Tc) | 90 A | — |
| On-Resistance RDS(on) Max @ VGS=10V | 6 mOhm | — |
| Power Dissipation (PD, Tc=25C) | 125 W | — |
| Gate Threshold Voltage VGS(th) | 2.0 V to 3.5 V | — |
| Operating Junction Temperature | -55 C to +150 C | -55 °C to +150 °C |
| Technology | OptiMOS 3 (Trench MOSFET) | OptiMOS™ 5 (logic-level) |
| Package | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TDSON-8-6 (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Halogen Free | [DATA_NEEDED: halogen status] | — |
| Gate Charge (Qg, typ) | [DATA_NEEDED: Qg value] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss value] | — |
| Avalanche Energy (EAS) | [DATA_NEEDED: EAS value] | — |
| Part Number | — | BSC094N06LS5ATMA1 |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TC=25°C | — | 47 A |
| Continuous Drain Current (ID) at TC=100°C | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| RDS(on) max at VGS=10 V | — | 9.4 mΩ |
| RDS(on) max at VGS=4.5 V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/range] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typ] |
| Power Dissipation (PD) at TC=25°C | — | 36 W |