BSC066N06NSATMA1 vs BSC0902NSIATMA1 对比
详细并排对比 BSC066N06NSATMA1 出自 Infineon 和 BSC0902NSIATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC066N06NSATMA1 | BSC0902NSIATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.49 | $0.32 |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at TC=25°C | 64 A | — |
| Continuous Drain Current (ID) at TC=100°C | 45 A | — |
| Pulsed Drain Current (IDM) | 256 A | [DATA_NEEDED: IDM] |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | 6.6 mΩ (max) | — |
| Gate Threshold Voltage (VGS(th)) | 1.7 V (typ) | — |
| Total Gate Charge (Qg) | 26 nC (typ) | — |
| Power Dissipation (PD) at TC=25°C | 46 W | — |
| Power Dissipation (PD) at TA=25°C | 2.5 W | — |
| Thermal Resistance, Junction-to-Case (RθJC) | 1.3 °C/W | — |
| 工作结温 | -55°C to +150°C | — |
| 封装 | PG-TDSON-8-6 (TDSON EP) | PG-TDSON-8-6 (TDSON-8) |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | 1 | [DATA_NEEDED: MSL rating] |
| RoHS 状态 | Compliant | Compliant |
| Technology | OptiMOS 5 60 V trench-gate | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 30V |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at TA=25C | — | 23 A |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| On-State Resistance RDS(on) Max at VGS=10V | — | 2.8 mOhm |
| Gate Charge QG(0V..10V) | — | 24 nC |
| Output Charge QOSS | — | 17 nC |
| Power Dissipation (TA) | — | 2.5 W |
| Power Dissipation (TC) | — | 48 W |
| 工作温度范围 | — | -55C to +150C (junction) |
| Built-in Diode | — | Yes (single with built-in diode) |
| Lead-Free | — | Yes |
| 无卤 | — | Yes |