BSC066N06NSATMA1 vs BSC0902NSIATMA1 Comparison

Detailed side-by-side comparison of BSC066N06NSATMA1 by Infineon and BSC0902NSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC066N06NSATMA1 BSC0902NSIATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at TC=25°C 64 A —
Continuous Drain Current (ID) at TC=100°C 45 A —
Pulsed Drain Current (IDM) 256 A [DATA_NEEDED: IDM]
Gate-Source Voltage (VGS) max ±20 V —
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V 6.6 mΩ (max) —
Gate Threshold Voltage (VGS(th)) 1.7 V (typ) —
Total Gate Charge (Qg) 26 nC (typ) —
Power Dissipation (PD) at TC=25°C 46 W —
Power Dissipation (PD) at TA=25°C 2.5 W —
Thermal Resistance, Junction-to-Case (RθJC) 1.3 °C/W —
Operating Junction Temperature -55°C to +150°C —
Package PG-TDSON-8-6 (TDSON EP) PG-TDSON-8-6 (TDSON-8)
Mounting Type Surface Mount Surface Mount
MSL Level 1 [DATA_NEEDED: MSL rating]
RoHS Status Compliant Compliant
Technology OptiMOS 5 60 V trench-gate —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 30V
Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 30 V
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at TA=25C — 23 A
Continuous Drain Current (ID) at TC=25C — 100 A
On-State Resistance RDS(on) Max at VGS=10V — 2.8 mOhm
Gate Charge QG(0V..10V) — 24 nC
Output Charge QOSS — 17 nC
Power Dissipation (TA) — 2.5 W
Power Dissipation (TC) — 48 W
Operating Temperature Range — -55C to +150C (junction)
Built-in Diode — Yes (single with built-in diode)
Lead-Free — Yes
Halogen Free — Yes

Datasheets & Resources

Browse All Products Create BOM Request Quote