BSC265N10LSFGATMA1 vs BSC360N15NS3GATMA1 对比
详细并排对比 BSC265N10LSFGATMA1 出自 Infineon 和 BSC360N15NS3GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
BSC265N10LSFGATMA1 - 100V 40A N-Channel OptiMOS 2 MOSFET | Infineon
BSC265N10LSFGATMA1 ✓ 量产中Infineon
BSC360N15NS3GATMA1 - 150V 36mOhm N-Channel OptiMOS MOSFET | Infineon
BSC360N15NS3GATMA1 ✓ 量产中规格对比
| 参数 | BSC265N10LSFGATMA1 | BSC360N15NS3GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.72 | $0.82 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 150 V |
| Continuous Drain Current (ID, Tc) | 40 A | — |
| Continuous Drain Current (ID, Ta) | 6.5 A | — |
| Power Dissipation (PD, Tc) | 78 W | — |
| Technology | OptiMOS 2 (TrenchFET) | OptiMOS 3 (N-Channel Trench MOSFET) |
| 封装 | PG-TDSON-8-1 (TDSON-8) | PG-TDSON-8-1 (SuperSO8, 5x6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min] | — |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max at VGS=10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total at VGS=10V] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typical] | — |
| 工作温度范围 | -55 C to +150 C (junction) | -55°C to +150°C (junction) |
| MSL 等级 | 1 (per JEDEC J-STD-020) | 1 |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Avalanche Rated | Yes | — |
| Series | OptiMOS 2 | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSC360N15NS3GATMA1 |
| Continuous Drain Current (ID) at Tc | — | 33 A |
| On-Resistance RDS(on) max at VGS=10V | — | 36 mOhm |
| Power Dissipation (PD) at Tc | — | 74 W |
| Gate Threshold Voltage (VGS th) typ | — | 3.0 V |
| Total Gate Charge (Qg) typ | — | [DATA_NEEDED: Qg value] |
| Avalanche Energy Rated | — | Yes |