BSC520N15NS3 vs BSC520N15NS3G 对比
详细并排对比 BSC520N15NS3 出自 Infineon 和 BSC520N15NS3G 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC520N15NS3 | BSC520N15NS3G |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.71 | $0.62 |
| Technology | OptiMOS 3, N-channel trench MOSFET | OptiMOS 3 (trench-gate N-channel) |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID, TC=25C) | 21 A | — |
| Pulsed Drain Current (IDM) | 84 A | — |
| On-State Resistance RDS(on) max (VGS=10V) | 52 mOhm | — |
| Gate-Source Voltage VGS max | +/- 20 V | — |
| Gate Threshold Voltage VGS(th) typ | 3 V | — |
| Power Dissipation (TC=25C) | 57 W | — |
| 工作结温 | -55C to +150C | -55C to +150C |
| 封装 | PG-TDSON-8-5 (SuperSO8, 5x6 mm) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | 1 | — |
| RoHS 状态 | Compliant | — |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Body Diode | Intrinsic, avalanche-rated | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSC520N15NS3 G |
| Drain-Source Voltage (VDS) max | — | 150 V |
| Continuous Drain Current (ID) max at TC=25C | — | 21 A |
| On-Resistance RDS(on) max | — | 52 mΩ at VGS=10 V |
| Power Dissipation (Ptot) at TC=25C | — | 57 W |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| 引脚数量 | — | 8 |
| Lead Plating | — | Pb-free |
| RoHS Compliance | — | Compliant |
| JEDEC Qualification | — | Qualified per JEDEC |
| Channel Type | — | N-Channel (normal level) |
| Typical Application | — | DC-DC conversion, synchronous rectification |