BSL207SPH6327XTSA1 vs BSS316NH6327XTSA1 对比

详细并排对比 BSL207SPH6327XTSA1 出自 Infineon 和 BSS316NH6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSL207SPH6327XTSA1 BSL207SPH6327XTSA1 - P-CH 20V 6A OptiMOS MOSFET | Infineon

BSL207SPH6327XTSA1 - P-CH 20V 6A OptiMOS MOSFET | Infineon

BSL207SPH6327XTSA1 ✓ 量产中
Infineon
BSS316NH6327XTSA1 BSS316NH6327XTSA1 - 30V N-Ch 1.4A OptiMOS 2 MOSFET | Infineon

BSS316NH6327XTSA1 - 30V N-Ch 1.4A OptiMOS 2 MOSFET | Infineon

BSS316NH6327XTSA1 ✓ 量产中

规格对比

参数 BSL207SPH6327XTSA1 BSS316NH6327XTSA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.33 $0.13
FET Type P-Channel N-Channel, Enhancement Mode
Technology MOSFET (Metal Oxide) OptiMOS 2 (Trench)
Drain to Source Voltage (VDS) -20 V —
Continuous Drain Current (ID) at 25C 6 A (Ta) —
Power Dissipation (PD) 2 W (Ta) —
RDS(on) Max @ VGS = -4.5 V [DATA_NEEDED: RDS(on) max @ VGS=-4.5V] —
RDS(on) Max @ VGS = -2.5 V [DATA_NEEDED: RDS(on) max @ VGS=-2.5V] —
Drive Voltage (Max RDS(on), Min RDS(on)) 2.5 V, 4.5 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
封装 TSOP-6 (PG-TSOP6-6) PG-SOT23 (SOT-23-3)
安装类型 Surface Mount Surface Mount
工作温度 -55C to +150C —
Series OptiMOS™ —
Automotive Qualification AEC-Q101 AEC-Q101 qualified
RoHS 状态 Compliant Compliant
引脚数量 6 —
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at TA=25C — 1.4 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Drain-Source On-Resistance RDS(on) max — 160 mOhm at VGS=10V, ID=1.4A
Gate-Source Threshold Voltage VGS(th) typ — 2 V at ID=3.7 uA
Total Gate Charge (Qg) — 600 pC at VGS=5 V
Input Capacitance (Ciss) — 94 pF at VDS=15 V
Output Capacitance (Coss) — [DATA_NEEDED: output capacitance]
Reverse Transfer Capacitance (Crss) — [DATA_NEEDED: reverse transfer capacitance]
Maximum Power Dissipation (PD) at TA=25C — 500 mW
工作结温范围 — -55 C to +150 C
Lead Plating — Pb-free (Matte Tin)
MSL 等级 — MSL1 (per JEDEC J-STD-020)

数据手册与资源

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