BSL606SNH6327XTSA1 vs BSL207SPH6327XTSA1 对比

详细并排对比 BSL606SNH6327XTSA1 出自 Infineon 和 BSL207SPH6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSL606SNH6327XTSA1 BSL606SNH6327XTSA1 - 60V N-Channel OptiMOS3 MOSFET | Infineon

BSL606SNH6327XTSA1 - 60V N-Channel OptiMOS3 MOSFET | Infineon

BSL606SNH6327XTSA1 ✓ 量产中
Infineon
BSL207SPH6327XTSA1 BSL207SPH6327XTSA1 - P-CH 20V 6A OptiMOS MOSFET | Infineon

BSL207SPH6327XTSA1 - P-CH 20V 6A OptiMOS MOSFET | Infineon

BSL207SPH6327XTSA1 ✓ 量产中

规格对比

参数 BSL606SNH6327XTSA1 BSL207SPH6327XTSA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.19 $0.33
晶体管类型 N-Channel MOSFET (Enhancement Mode) —
Technology OptiMOS3 trench MOSFET MOSFET (Metal Oxide)
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Ta 4.5 A —
Static Drain-Source On-Resistance (RDS(on)) 60 mOhm (max, VGS = 10 V) —
Total Power Dissipation (PD) at Ta 2 W —
Gate-Source Voltage (VGS) +/-20 V (max) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min] [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) 5.6 nC (max) —
工作温度范围 -55C to +150C (Tj) —
封装 PG-TSOP6-6 (6-pin, SOT-23-6 compatible) TSOP-6 (PG-TSOP6-6)
安装类型 Surface Mount Surface Mount
Qualification AEC-Q101 (Automotive) —
RoHS 状态 Compliant (Pb-free plating) Compliant
MSL 等级 1 (per JEDEC J-STD-020) —
FET Type — P-Channel
Drain to Source Voltage (VDS) — -20 V
Continuous Drain Current (ID) at 25C — 6 A (Ta)
Power Dissipation (PD) — 2 W (Ta)
RDS(on) Max @ VGS = -4.5 V — [DATA_NEEDED: RDS(on) max @ VGS=-4.5V]
RDS(on) Max @ VGS = -2.5 V — [DATA_NEEDED: RDS(on) max @ VGS=-2.5V]
Drive Voltage (Max RDS(on), Min RDS(on)) — 2.5 V, 4.5 V
工作温度 — -55C to +150C
Series — OptiMOS™
Automotive Qualification — AEC-Q101
引脚数量 — 6

数据手册与资源

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