BSL606SNH6327XTSA1 vs BSP295H6327XTSA1 对比

详细并排对比 BSL606SNH6327XTSA1 出自 Infineon 和 BSP295H6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSL606SNH6327XTSA1 BSL606SNH6327XTSA1 - 60V N-Channel OptiMOS3 MOSFET | Infineon

BSL606SNH6327XTSA1 - 60V N-Channel OptiMOS3 MOSFET | Infineon

BSL606SNH6327XTSA1 ✓ 量产中
Infineon
BSP295H6327XTSA1 BSP295H6327XTSA1 - 60V 1.8A N-Ch MOSFET SOT-223 | Infineon

BSP295H6327XTSA1 - 60V 1.8A N-Ch MOSFET SOT-223 | Infineon

BSP295H6327XTSA1 ✓ 量产中

规格对比

参数 BSL606SNH6327XTSA1 BSP295H6327XTSA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.19 $0.35
晶体管类型 N-Channel MOSFET (Enhancement Mode) N-Channel MOSFET
Technology OptiMOS3 trench MOSFET Planar N-channel MOSFET
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Ta 4.5 A —
Static Drain-Source On-Resistance (RDS(on)) 60 mOhm (max, VGS = 10 V) —
Total Power Dissipation (PD) at Ta 2 W —
Gate-Source Voltage (VGS) +/-20 V (max) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min] [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge (Qg) 5.6 nC (max) —
工作温度范围 -55C to +150C (Tj) -55 °C to +150 °C
封装 PG-TSOP6-6 (6-pin, SOT-23-6 compatible) PG-SOT223-4 (3 leads + tab)
安装类型 Surface Mount Surface Mount
Qualification AEC-Q101 (Automotive) AEC-Q101 (Automotive)
RoHS 状态 Compliant (Pb-free plating) Compliant
MSL 等级 1 (per JEDEC J-STD-020) —
Drain-Source Voltage (VDS) max — 60 V
Continuous Drain Current (ID) at Ta=25 °C — 1.8 A
Power Dissipation (PD) at Ta=25 °C — 1.8 W
Drain-Source On-Resistance RDS(on) max — 300 mΩ
Tape and Reel Packing Code — H6327 (7-inch reel)
Channel Mode — Enhancement
Drain Tab Connection — Pin 4 (tab)

数据手册与资源

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