BSO150N03MDGXUMA1 vs BSZ036NE2LSATMA1 对比
详细并排对比 BSO150N03MDGXUMA1 出自 Infineon 和 BSZ036NE2LSATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
BSO150N03MDGXUMA1 - 30V Dual N-Channel MOSFET, 9.3A, OptiMOS 3M | Infineon
BSO150N03MDGXUMA1 ✓ 量产中
规格对比
| 参数 | BSO150N03MDGXUMA1 | BSZ036NE2LSATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.37 | $0.42 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSO150N03MDGXUMA1 | — |
| Product Type | Dual N-Channel MOSFET Array | — |
| Technology | OptiMOS 3M (30V trench MOSFET) | — |
| Drain-Source Voltage (VDS) max | 30 V | — |
| Continuous Drain Current (ID) max per channel | 9.3 A | — |
| On-State Resistance (RDS(on)) max | 15 mOhm at VGS=10V | — |
| Gate-Source Voltage (VGS) max | 20 V | — |
| Gate Threshold Voltage (VGS(th)) typ | 1.0 V | — |
| Power Dissipation (PD) max | 1.4 W | — |
| 工作温度范围 | -55C to +150C | -55C to +150C |
| 封装 | PG-DSO-8 (SO-8 with exposed pad) | PG-TSDSON-8-FL (5x6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | 1 (unlimited) | 1 (Unlimited) |
| RoHS 状态 | Compliant | Compliant |
| Channel Configuration | Dual N-Channel (independent) | — |
| Product Family | — | OptiMOS 25V |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 25 V |
| Continuous Drain Current (ID) at TA=25C | — | 16 A |
| Continuous Drain Current (ID) at TC=25C | — | 40 A |
| Power Dissipation (PD) at TA=25C | — | 2.1 W |
| Power Dissipation (PD) at TC=25C | — | 37 W |
| Configuration | — | Single |
| Lead-Free | — | Yes |
| Gate Drive | — | Logic-level compatible |