BSO150N03MDGXUMA1 vs BSZ036NE2LSATMA1 Comparison
Detailed side-by-side comparison of BSO150N03MDGXUMA1 by Infineon and BSZ036NE2LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSO150N03MDGXUMA1 - 30V Dual N-Channel MOSFET, 9.3A, OptiMOS 3M | Infineon
BSO150N03MDGXUMA1 β ActiveInfineon
BSZ036NE2LSATMA1
BSZ036NE2LSATMA1 - 25V N-Channel OptiMOS Power MOSFET | Infineon
BSZ036NE2LSATMA1 β ActiveSpecification Comparison
| Parameter | BSO150N03MDGXUMA1 | BSZ036NE2LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.37 | $0.42 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSO150N03MDGXUMA1 | β |
| Product Type | Dual N-Channel MOSFET Array | β |
| Technology | OptiMOS 3M (30V trench MOSFET) | β |
| Drain-Source Voltage (VDS) max | 30 V | β |
| Continuous Drain Current (ID) max per channel | 9.3 A | β |
| On-State Resistance (RDS(on)) max | 15 mOhm at VGS=10V | β |
| Gate-Source Voltage (VGS) max | 20 V | β |
| Gate Threshold Voltage (VGS(th)) typ | 1.0 V | β |
| Power Dissipation (PD) max | 1.4 W | β |
| Operating Temperature Range | -55C to +150C | -55C to +150C |
| Package | PG-DSO-8 (SO-8 with exposed pad) | PG-TSDSON-8-FL (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (unlimited) | 1 (Unlimited) |
| RoHS Status | Compliant | Compliant |
| Channel Configuration | Dual N-Channel (independent) | β |
| Product Family | β | OptiMOS 25V |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 25 V |
| Continuous Drain Current (ID) at TA=25C | β | 16 A |
| Continuous Drain Current (ID) at TC=25C | β | 40 A |
| Power Dissipation (PD) at TA=25C | β | 2.1 W |
| Power Dissipation (PD) at TC=25C | β | 37 W |
| Configuration | β | Single |
| Lead-Free | β | Yes |
| Gate Drive | β | Logic-level compatible |