BSO613SPVGXUMA1 vs BSS127H6327XTSA2 对比
详细并排对比 BSO613SPVGXUMA1 出自 Infineon 和 BSS127H6327XTSA2 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSO613SPVGXUMA1 | BSS127H6327XTSA2 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.98 | $0.03 |
| FET Type | P-Channel | N-Channel SIPMOS, enhancement mode |
| Drain-Source Voltage (VDS) | -60 V | 600 V |
| Continuous Drain Current (ID) at TA=25C | -3.44 A | — |
| Power Dissipation (PD) at TA=25C | 2.5 W | — |
| 封装 | PG-DSO-8-6 (Power-SO-8) | SOT-23-3 (PG-SOT23) |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | OptiMOS (Trench) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max values] | 4.5 V (logic level, rated) |
| RDS(on) at VGS=10V | [DATA_NEEDED: RDS(on) max at VGS=10V] | — |
| RDS(on) at VGS=4.5V | [DATA_NEEDED: RDS(on) max at VGS=4.5V] | — |
| 工作温度范围 | -55C to +150C (junction, per industry standard for Power-SO-8 MOSFETs) | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed value] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max +/-V] | [DATA_NEEDED: VGS max rating] |
| MSL 等级 | MSL3 (per JEDEC J-STD-020, industry standard for Power-SO-8) | [DATA_NEEDED: MSL rating] |
| RoHS 状态 | Compliant | Compliant (lead-free) |
| Lead-Free | Yes | — |
| Avalanche Rated | Yes (per Infineon OptiMOS family) | — |
| 引脚数量 | 8 (6 active, 2 thermal/NC) | 3 |
| Continuous Drain Current (ID) | — | 21 mA (Ta) |
| Pulsed Drain Current (ID,pulse) | — | [DATA_NEEDED: pulsed ID limit] |
| On-State Resistance (RDS(on)) max | — | 500 ohm at ID = 21 mA |
| Total Power Dissipation (Ptot) | — | 500 mW (Ta) |
| 工作结温 | — | -55 C to +150 C |
| dv/dt Rated | — | Yes |
| Automotive Qualification | — | AEC-Q101 |
| 无卤 | — | Yes, per IEC 61249-2-21 |