BSP316PH6327XTSA1 vs BSS192PH6327FTSA1 对比

详细并排对比 BSP316PH6327XTSA1 出自 Infineon 和 BSS192PH6327FTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSP316PH6327XTSA1 BSP316PH6327XTSA1 - P-Ch 100V 680mA MOSFET | Infineon | SOT-223

BSP316PH6327XTSA1 - P-Ch 100V 680mA MOSFET | Infineon | SOT-223

BSP316PH6327XTSA1 ✓ 量产中
Infineon
BSS192PH6327FTSA1 BSS192PH6327FTSA1 - P-Ch 250V 190mA MOSFET SOT-89 | Infineon

BSS192PH6327FTSA1 - P-Ch 250V 190mA MOSFET SOT-89 | Infineon

BSS192PH6327FTSA1 ✓ 量产中

规格对比

参数 BSP316PH6327XTSA1 BSS192PH6327FTSA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.21 $0.34
FET Type P-Channel P-Channel
Drain-to-Source Voltage (VDS) -100 V —
Continuous Drain Current (ID) at TA=25C -680 mA —
Total Power Dissipation (Ptot) at TA=25C 1.8 W —
On-Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=-10V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
封装 PG-SOT223-4 (TO-261-4) PG-SOT89 (SOT-89-3, 4-pin 3+Tab)
安装类型 Surface Mount Surface Mount
工作温度范围 -55 C to +150 C (junction) [DATA_NEEDED: Tj max / operating temp]
引脚数 3 + thermal tab —
Channel Mode Enhancement —
Technology SIPMOS (P-channel MOSFET) MOSFET (Metal Oxide)
RoHS 状态 Compliant [DATA_NEEDED: explicit RoHS status from datasheet]
MSL 等级 1 —
Packaging Tape & Reel (H6327 suffix) —
Drain-to-Source Voltage (Vdss) — 250 V
Continuous Drain Current (Id) @ 25C — 190 mA (Ta)
Power Dissipation (Pd) — 1 W (Ta)
Drive Voltage (Max Rds On, Min Rds On) — 2.8 V, 10 V
Rds On (Max) @ Id, Vgs — [DATA_NEEDED: Rds On max @ Vgs]
Vgs(th) (Max) — [DATA_NEEDED: gate threshold voltage max]
Vgs(th) (Typ) — [DATA_NEEDED: gate threshold voltage typ]
Automotive Qualification — AEC-Q101 (per distributor listing)
Series — SIPMOS Small-Signal-Transistor
Part Status — Active

数据手册与资源

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