BSS127H6327XTSA2 vs BSS87H6327FTSA1 对比
详细并排对比 BSS127H6327XTSA2 出自 Infineon 和 BSS87H6327FTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSS127H6327XTSA2 | BSS87H6327FTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.03 | $0.18 |
| FET Type | N-Channel SIPMOS, enhancement mode | N-Channel enhancement-mode |
| Drain-Source Voltage (VDS) | 600 V | 240 V |
| Continuous Drain Current (ID) | 21 mA (Ta) | 260 mA (Ta) |
| Pulsed Drain Current (ID,pulse) | [DATA_NEEDED: pulsed ID limit] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | 4.5 V (logic level, rated) | [DATA_NEEDED: VGS(th) typical/min/max] |
| On-State Resistance (RDS(on)) max | 500 ohm at ID = 21 mA | — |
| Total Power Dissipation (Ptot) | 500 mW (Ta) | — |
| 工作结温 | -55 C to +150 C | — |
| 封装 | SOT-23-3 (PG-SOT23) | PG-SOT89-4-2 (SOT-89) |
| 安装类型 | Surface Mount | Surface Mount |
| 引脚数量 | 3 | 3 (Gate / Drain / Source) |
| dv/dt Rated | Yes | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| RoHS 状态 | Compliant (lead-free) | Compliant |
| 无卤 | Yes, per IEC 61249-2-21 | — |
| MSL 等级 | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Power Dissipation (PD) | — | 1 W (Ta) |
| Drain-Source On-Resistance (RDS(on)) | — | 6 ohm max at VGS=10V |
| Gate-Source Voltage (VGS) | — | +/-20 V |
| 工作温度范围 | — | -55C to +150C (junction) |
| Lead-Free / Pb-Free | — | Yes (Pb-free plating) |
| Process Technology | — | Vertical DMOS |