BSS138LT1G vs BSS138L 对比

详细并排对比 BSS138LT1G 出自 onsemi 和 BSS138L 出自 onsemi。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 BSS138LT1G BSS138L
品牌 onsemi onsemi
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.08 $0.02
晶体管类型 N-Channel MOSFET —
Drain-Source Voltage (VDS) 50 V —
Continuous Drain Current (ID) 200 mA (Ta) —
Power Dissipation (PD) 225 mW (Ta) —
On-Resistance Max (RDS(on)) 3.5 ohm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Gate-Source Voltage Max (VGS) [DATA_NEEDED: maximum gate-source voltage] —
Configuration Single FET Single FET
Channel Mode Enhancement Mode —
封装 SOT-23-3 (TO-236) SOT-23-3
安装类型 Surface Mount Surface Mount
工作温度 [DATA_NEEDED: operating temperature range] —
RoHS 状态 Compliant (RoHS Compliant and Pb-free per Easybom) [DATA_NEEDED: RoHS status]
Product Family BSS138LT Series Small Signal MOSFET —
Typical Applications Computers, printers, cordless phones, DC-DC converters —
Polarity — N-Channel
Operating Mode — Enhancement Mode
VDS Drain-Source Voltage — 50 V
Continuous Drain Current (Ta) — 200 mA
Power Dissipation (Ta) — 350 mW
RDS(on) Max — 3.5 ohm
Technology — Trench MOSFET, high cell density
Gate Type — Logic Level
Switching Performance — Fast switching, rugged, reliable
输入电容 — [DATA_NEEDED: Ciss]
VGS Gate-Source Voltage — [DATA_NEEDED: VGS max rating]
工作温度范围 — [DATA_NEEDED: operating temperature range]
Packaging — 3000 units per reel (tape and reel)

数据手册与资源

浏览全部产品 创建 BOM 获取报价