BSS138LT1G vs BSS138LT1G-VB 对比

详细并排对比 BSS138LT1G 出自 onsemi 和 BSS138LT1G-VB 出自 VBsemi Elec。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

VBsemi Elec
BSS138LT1G-VB BSS138LT1G-VB - 50V 200mA N-Channel MOSFET | VBsemi

BSS138LT1G-VB - 50V 200mA N-Channel MOSFET | VBsemi

BSS138LT1G-VB ✓ 量产中

规格对比

参数 BSS138LT1G BSS138LT1G-VB
品牌 onsemi VBsemi Elec
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.08 $0.02
晶体管类型 N-Channel MOSFET N-Channel Enhancement Mode MOSFET
Drain-Source Voltage (VDS) 50 V —
Continuous Drain Current (ID) 200 mA (Ta) —
Power Dissipation (PD) 225 mW (Ta) —
On-Resistance Max (RDS(on)) 3.5 ohm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Gate-Source Voltage Max (VGS) [DATA_NEEDED: maximum gate-source voltage] —
Configuration Single FET Single FET
Channel Mode Enhancement Mode —
封装 SOT-23-3 (TO-236) SOT-23-3 (TO-236)
安装类型 Surface Mount Surface Mount
工作温度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
RoHS 状态 Compliant (RoHS Compliant and Pb-free per Easybom) Compliant
Product Family BSS138LT Series Small Signal MOSFET —
Typical Applications Computers, printers, cordless phones, DC-DC converters —
Drain-Source Voltage (Vdss) — 50 V
Continuous Drain Current (Id) — 200 mA (Ta)
Power Dissipation (Pd) — 225 mW (Ta)
Gate Threshold Voltage (Vgs th) — [DATA_NEEDED: gate threshold voltage]
RDS(on) Max — [DATA_NEEDED: RDS(on)]
Drive Voltage — [DATA_NEEDED: drive voltage]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg]
Manufacturer — VBsemi Elec
Equivalent To — onsemi BSS138LT1G

数据手册与资源

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